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Semiconductor thermocouple microwave power sensor

A technology of microwave power and thermocouple, which is applied in the direction of electric power measurement by thermal method, can solve the problems of impedance mismatch, low sensitivity of thermocouple power meter, and large temperature coefficient of silicon resistance, etc., so as to reduce heat capacity and increase Thermal resistance, the effect of increasing the aspect ratio

Inactive Publication Date: 2004-07-07
INST OF ELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

For thin-film thermocouple structures (such as figure 1 shown), in order to match the microwave input impedance, the resistance value of the total resistance of the thermocouple must be limited, but in this way, the doping of silicon cannot be too small, otherwise the resistance of silicon will increase, and the temperature coefficient of resistance of silicon is relatively low Large, in the case of high power, the change in its resistance will affect the total thermocouple resistance, resulting in impedance mismatch
Therefore, the sensitivity of this thermocouple power meter is not high

Method used

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  • Semiconductor thermocouple microwave power sensor
  • Semiconductor thermocouple microwave power sensor
  • Semiconductor thermocouple microwave power sensor

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Embodiment Construction

[0026] figure 1 is a schematic structural diagram of an existing film-type semiconductor thermocouple-type microwave power sensor chip, wherein, figure 1 (a) is a schematic diagram of the front of the chip, figure 1 (b) is a schematic cross-sectional view of the thermocouple chip. Such as figure 1 As shown in (a) and (b), selective diffusion of N on the P-type silicon 8 substrate + Silicon 30, on which SiO is grown 2 and Si 3 N 4 As the insulating protective layer 25, Ta 2 The N resistance film 2 and the metal leads 1 and 6 form a thermocouple. N + One end of Si 30 with Ta 2 The N contact forms the hot junction 27 of the thermocouple, and the other end contacts the metal lead 6 to form the cold junction 28 of the thermocouple. Thermocouple resistance by N + Silicon resistance and Ta 2 The N resistance is composed of two parts, and is mainly microwave absorption resistance. The microwave power is scattered on the thermocouple resistance to generate heat, making the...

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Abstract

The transducer consists of silicon substrate, N+ silicon under-impedance channel formed by diffusing N+ silicon in the substrate selectively, protective insulation layer prepared on the substrate, microwave absorption resistance set at the protective insulation layer and electrode leads for the first, the second as well as the third metal electrode. The trench which is in punch-through of the substrate and the protective insulation layer is made separately in between leads for the first, the second and the third electrode to form isolated thermocouple channel and isolated micro wave absorption channel in bridge shape.

Description

technical field [0001] The invention relates to a microwave power sensor for measuring microwave power, in particular to a thermocouple type microwave power sensor for measuring microwave power. Background technique [0002] Power measurement occupies an extremely important position in the field of electromagnetic measurement. The sensing elements used in power measurement include thermistors, thermal resistors, thin film resistors, diodes, pyroelectric thin films, and Hall elements. At present, there are only a few types of sensors used in China, such as thermistors and thermoelectric films, which have problems such as poor reliability, low precision, and narrow frequency band; the semiconductor thermocouple type microwave power sensor has high sensitivity, wide frequency band, high precision, fast response, Good reliability, easy mass production, etc., have been widely used in power meters imported from abroad, such as the 435A / 8481A thermocouple power meter system produc...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R21/02G01R21/04
Inventor 崔大付者文明陈德勇
Owner INST OF ELECTRONICS CHINESE ACAD OF SCI
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