Power field-effect tube and method for manufacturing same
A technology of power field effect transistors and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., and can solve problems such as product scrapping, aspect ratio limitations, and affecting device performance
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[0017] The present invention aims to provide an improved power field effect tube and a manufacturing method thereof, so that the gate trench can be filled more easily, the aspect ratio of the gate trench can be increased, and the performance of the device can be improved.
[0018] A method for manufacturing a power field effect tube includes the following steps: (a) providing a substrate, forming an inversion substrate on the substrate, and forming a first mask layer with a first opening on the inversion substrate; (b) Using the first mask layer as a mask, etch a part of the inversion substrate to form a first trench; (c) deposit a second mask layer in the first trench and the sidewall of the first opening, and etch back The second mask layer makes the second mask layer have a second opening, the width of the second opening is smaller than the first opening; (d) Using the second mask layer as a mask, etch the inverted substrate, A second trench is formed in the substrate, the fir...
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