Method for performing phase change memory cell integration by using electrochemical deposition

Abstract

The invention discloses a method for performing phase change memory cell integration by using electrochemical deposition. The method comprises the following steps of: S1, preparing a conductive substrate; S2, preparing an insulating layer; S3, preparing deep holes; S4, preparing a reaction solution mixed with two different electrolytes; S5, performing electrochemical deposition in the deep holes from bottom to top, and depositing an upper-layer material and a lower-layer material, namely a gating tube and a phase change unit, in each deep hole by adjusting deposition parameters; S6, preparingupper electrodes. The deep holes with nanoscale apertures are etched through a micro-nano machining technology, and then the deep holes are rapidly and effectively filled through the electrochemical deposition method; the nano phase change material can be grown from the bottom of each nano hole; the ultra-large depth-to-width ratio small holes can be filled with a sulfur phase-change material witha multi-layer complex structure; the growth of the materials can be accurately regulated and controlled by regulating and controlling the deposition parameters; graphical growth is realized by designing the shape of electrodes of which the bottom can apply potentials; and preparation of various materials with complex structures is carried out.

Description

technical field [0001] The invention belongs to the technical field of microelectronic devices and memories, and in particular relates to a method for integrating phase-change memory units by using electrochemical deposition. Background technique [0002] The traditional phase-change memory (PCM) has gradually been unable to meet the demand for high-capacity storage in the era of big data. Whether it is the three-dimensional stacking of PCM or the continuous reduction of device size, it is to improve storage density and reliability. However, with the advancement of process nodes, not only the continuous increase of the aspect ratio of the device structure makes it difficult to fill deep holes in the process, but also the co-integration of the gate unit and the phase change material unit in the 3D Xpoints structure also depends on Fast and efficient deep hole filling process. [0003] Although advanced photolithography processes can carve nano-aperture patterns, commonly use...

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Problems solved by technology

[0005] Aiming at at least one of the above defects or improvement needs of the prior art, especially the clogging problem existing in the existing filling method, the present invention provides a method for reusing deep holes with nanoscale apertures etched by micro-nano processing technology. The method of electrochemical deposition is a process method for quickly and effectively filling deep holes, which can grow nano-phase change materials from the bottom of nano-pores, and can realize the filling of chalcogenide phase-change materials with multi-layer and complex structures in small holes with ultra-large aspect ratios.

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