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Deep hole superlattice filling method based on electrochemical deposition

A filling method and electrochemical technology, applied in electrical components, nanotechnology and other directions, can solve problems such as clogging of filling methods, and achieve the effects of avoiding reaction interruption, simple preparation process and close contact.

Active Publication Date: 2021-10-01
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Aiming at at least one of the above defects or improvement needs of the prior art, especially the clogging problem existing in the existing filling method, the present invention provides a method for reusing deep holes with nanoscale apertures etched by micro-nano processing technology. The method of electrochemical deposition is a process method for quickly and effectively filling deep holes, which can grow nano-phase change materials from the bottom of nano-holes, and can realize ultra-large aspect ratio small holes for filling chalcogenide phase-change materials

Method used

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  • Deep hole superlattice filling method based on electrochemical deposition
  • Deep hole superlattice filling method based on electrochemical deposition
  • Deep hole superlattice filling method based on electrochemical deposition

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specific Embodiment approach

[0067] Place the silicon wafer in acetone and alcohol for ultrasonic cleaning for about ten minutes; after the ultrasonic is completed, use a nitrogen gun to blow off the residual liquid on the surface and dry it for use.

[0068] Use magnetron sputtering or electron beam evaporation to evaporate a metal conductive layer such as titanium platinum, nickel gold, etc. on a clean silicon wafer, with a thickness between 10nm and 200nm. Use PECVD or ALD to grow a layer of dense silicon dioxide or alumina. This step involves a high reaction temperature, but there is no functional layer on the sample, which will not affect the performance of the device. The thickness can reach the micron level or more according to the design requirements.

[0069] Combined with photolithography or other mask processes, the pattern is transferred to the sample. Use the etching method to etch small holes. If the depth of subsequent etching is deeper, the mask can be replaced with a mask that is more re...

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Abstract

The invention discloses a deep hole superlattice filling method based on electrochemical deposition, comprising the following steps: S1: preparing a conductive substrate; S2: preparing an insulating layer; S3: preparing a deep hole; S4: configuring a reaction solution, wherein two different electrolytes; S5: electrochemical deposition is carried out from the bottom to the top in the deep hole, wherein, by adjusting the deposition parameters, the first phase change material layer and the second phase change material layer are alternately deposited in the deep hole respectively, forming a super Lattice structure; S6: Preparation of upper electrode. The invention uses micro-nano processing technology to etch deep holes with nano-scale apertures and then uses electrochemical deposition to quickly and effectively fill the deep holes. The nano-phase change material can be grown from the bottom of the nano-hole, and the ultra-high depth can be realized. The wide-ratio pores are filled with chalcogenide phase change materials, and the precise control of material growth can be achieved by adjusting the deposition parameters.

Description

technical field [0001] The invention belongs to the technical field of microelectronic devices and memories, and in particular relates to a deep hole superlattice filling method based on electrochemical deposition. Background technique [0002] The traditional phase-change memory (PCM) has gradually been unable to meet the demand for high-capacity storage in the era of big data. Whether it is the three-dimensional stacking of PCM or the continuous reduction of device size, it is to improve storage density and reliability. However, with the advancement of process nodes, not only the increasing aspect ratio of the device structure makes it difficult to fill deep holes in the process, but also large-scale integration needs to rely on fast and effective deep hole filling processes. [0003] Although advanced photolithography processes can carve nano-aperture patterns, commonly used dry etching processes such as plasma etching, ion beam etching, and reactive ion etching methods c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00B82Y40/00
CPCB82Y40/00H10N70/023H10N70/066
Inventor 童浩万代兴缪向水徐开朗
Owner HUAZHONG UNIV OF SCI & TECH
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