semiconductor structure

Abstract

The present invention relates to a semiconductor structure, comprising a carrier, a first protection layer, a second protection layer and a third protection layer, the first surface of the first protection layer has a first anti-stress region, the second protection layer The first anti-stress region is exposed, the second protective layer has a first side and a second side, a first extension line extending from the first bottom of the first side and a second bottom of the second side The extended second extension lines intersect to form a first base point, the third protective layer has a third side and a fourth side, the third side forms a first projection line on the first surface, and the first projection line The extension line intersects with the second base to form a first intersection point, the fourth side surface forms a second projection line on the first surface, and the extension line of the second projection line intersects with the first base to form a second intersection point. The area formed by the intersection point, the first base point, the first intersection point and the second intersection point is the first anti-stress area.

Description

technical field [0001] The present invention relates to a semiconductor structure, in particular to a semiconductor structure with an anti-stress region. It is a new design with considerable practicability and progressiveness, and is suitable for wide popularization and application in the industry. Background technique [0002] see Figure 6 , is a conventionally known semiconductor structure 200, which has a carrier 210, a first protective layer 220, a second protective layer 230, and a third protective layer 240, because the first protective layer 220, the second protective layer 230 and the third protective layer 240 are quadrangular and the first protective layer 220, the second protective layer 230 and the third protective layer 240 are stacked on the carrier 210, so the stress of the semiconductor structure 200 is easy to concentrate on The overlapping corner of the first passivation layer 220 and the second passivation layer 230 makes the corner of the overlap of the...

AI Technical Summary

Problems solved by technology

[0002] see Image 6 , is a conventionally known semiconductor structure 200, which has a carrier 210, a first protective layer 220, a second protective layer 230, and a third protective layer 240, because the first protective layer 220, the second protective layer 230 and the third protective layer 240 are quadrangular and the first protective layer 220, the second protective layer 230 and the third protective layer 240 are stacked on the carrier 210, so the stress of the semiconductor structure 200 is easy to concentrate on The overlapping corner of the first passivation layer 220 and the second passivation layer 230 makes the corner of the overlap of the first passivation layer 220 and the second passivation layer 230 cracked or disconnected, thereby reducing the yield of the semiconductor structure 200

[0003] It can be seen that the above-mentioned existing semiconductor structure obviously still has inconvenience and defects in structure and use, and needs to be further improved urgently.

In order to solve the problems existing in the semiconductor structure, the relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and there is no suitable structure for general products to solve the above problems. This is obviously a problem. Issues that relevant industry players are eager to solve

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