Infiltrating type micro-image exposal apparatus and method thereof

Abstract

This invention relates to one dipped micro image exposure device and its method, which is suitable for dipped micro image bubble elimination during exposure period and comprises optical system to project light onto crystal circle through light cover and optical transfer chamber is near to above optical system to load exposure liquid; at least one million Hertz super wave board to combine to optical transfer chamber to generate sound wave to eliminate exposure micro bubble.

Description

technical field [0001] The invention relates to a lithography process, which is applied in the manufacture of semiconductor integrated circuits to make integrated circuit patterns on photoresists, and in particular to a megasonic ultrasonic immersion lithography exposure equipment and method, wherein the infiltration liquid Sonicated to eliminate air bubbles in the liquid during the lithographic exposure step. Background technique [0002] In general, various processing steps are used to fabricate integrated circuits on semiconductor wafers. These steps include: depositing a conductive layer on the silicon wafer buildup; forming a photoresist or other mask, such as titanium oxide or silicon oxide, with the desired metal interconnect pattern using standard lithography or optical lithography techniques; The round substrate undergoes a dry etching process to remove the conductive layer from areas not covered by the mask, thus etching the conductive layer on the substrate in th...

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Problems solved by technology

These residual micro-bubbles tend to attach to the surface of the photoresist, which is typicall

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