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An all-optical switch and optical memory based on graphene optical bistability

An all-optical switch and bistable technology, which is applied in the field of all-optical communication, can solve problems such as the reduction of transmitted light intensity, achieve low-threshold optical bistable states, and enhance the effect of electric field localization

Active Publication Date: 2021-07-20
合肥名龙电子科技有限公司
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Problems solved by technology

Moreover, surface plasmons can only be excited in special metamaterials and Kretschmann structures
[0005] If a Bragg grating is used to form a Fabry-Perot cavity, the larger the period number of the grating, the better the monochromaticity of the defect mode and the stronger the localization of the electric field, but due to the loss in the material, the transmitted light intensity will decrease accordingly. reduce

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  • An all-optical switch and optical memory based on graphene optical bistability
  • An all-optical switch and optical memory based on graphene optical bistability
  • An all-optical switch and optical memory based on graphene optical bistability

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[0016] In order to facilitate those of ordinary skill in the art to understand and implement the present invention, the present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the implementation examples described here are only used to illustrate and explain the present invention, and are not intended to limit this invention.

[0017] The imaginary part of the refractive index of the material represents the loss or gain of the material. The loss will cause energy attenuation on the surface, which is an unfavorable factor and should be minimized in device design. The present invention finely modulates MgF 2 The real part and the imaginary part of the refractive index of the doped dielectric material with ZnS as the matrix make the refractive index satisfy parity-time symmetry (PT symmetry), that is, n(z)=n*(-z). Dielectric multilayers satisfying parity-time symmetry can enhance the ...

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Abstract

The invention discloses an all-optical switch and an optical memory based on graphene optical bistable state. Firstly, the loss and gain of the material are used to finely modulate the MgF 2 The real part and the imaginary part of the refractive index of the doped dielectric material with ZnS as the matrix, so that the refractive index satisfies the parity-time symmetry, forming a resonant cavity of the parity-time symmetry structure; and then embedding graphene in the center of this structure , using the third-order nonlinear effect of graphene to achieve low-threshold optical bistability, the threshold of the bistability is as low as GW / cm 2 order of magnitude; finally utilize the bistable effect of graphene to make all-optical switches and optical memory in all-optical communication systems; the present invention provides a new option for the optical memory of existing all-optical switches, and the switching threshold It can be flexibly tuned by the chemical potential of graphene.

Description

technical field [0001] The invention belongs to the technical field of all-optical communication, and relates to an all-optical switch and an optical memory used in an all-optical communication system, in particular to an all-optical switch and an optical memory based on a graphene optical bistable state. Background technique [0002] With the development of all-optical network and information detection technology, there is an urgent need to develop all-optical switches and optical memories. By applying the optical bistability effect of nonlinear materials, all-optical switches and optical memories can be realized. [0003] In the past, the localization of the electric field was generally enhanced by the surface plasmon polaritons or the Fabry-Perot cavity structure of the material to achieve low-threshold optical bistability, and the loss of the material should be minimized. [0004] Surface plasmons require transverse magnetic waves, which are generated in metal materials...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F3/02H03K17/94G11C13/04
CPCG02F3/024G11C13/047H03K17/941
Inventor 赵东
Owner 合肥名龙电子科技有限公司
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