A kind of preparation method of Gan-based light-emitting diode epitaxial wafer

Abstract

The invention discloses a preparation method of a GaN-based light-emitting diode epitaxial wafer, and belongs to the technical field of light-emitting diodes. The method comprises the following stepsof placing a substrate into a growth reaction chamber; growing a low-temperature GaN buffer layer, a GaN nucleating layer, an n-type GaN layer and a light-emitting layer on the substrate in sequence;generating a pulse signal, and inputting a Ga source into the growth reaction chamber at the high level of a first pulse period; inputting an Al source to the growth reaction chamber at the high levelof a second pulse period; at the high level of a third pulse period, inputting an In source into the growth reaction chamber; and at the low level of the first pulse period, the low level of the second pulse period, and the low level of the third pulse period, inputting NH3 to the growth reaction chamber separately, wherein the first pulse period of the pulse signal is the first, second or thirdpulse period; the pulse period adjacent to the first pulse period is the second pulse period; the pulse period adjacent to the second pulse period is the third pulse period; and the pulse period adjacent to the third pulse period is the first pulse period.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to a method for preparing GaN-based light-emitting diode epitaxial wafers. Background technique [0002] GaN (Gallium Nitride) is a typical representative of the third-generation wide-bandgap semiconductor materials. It has excellent high thermal conductivity, high temperature resistance, acid and alkali resistance, and high hardness. It is widely used in the production of blue, green, and ultraviolet led. GaN-based light emitting diodes generally include an epitaxial wafer and electrodes disposed on the epitaxial wafer. [0003] An existing epitaxial wafer of a GaN-based light-emitting diode, which includes a substrate, and a nucleation layer, an N-type layer, a multi-quantum well layer, an EBL (Electron Blocking Layer, electron blocking layer) and P-type layer. Among them, the EBL is an AlInGaN layer, which improves the injection efficiency of carriers by suppress...

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Problems solved by technology

[0005] TMAl, TMIn, TEGa and NH 3 When input at the same time, TMAl and NH 3 , TMIn and NH 3 , and TEGa and NH 3 A pre-reaction will occur, that is, TMAl and NH 3 , TMIn and NH 3 , and TEGa and NH 3 When colliding, a small amount of nanometer-sized particles are formed in the gas phase, and the particles fall to the reaction surface to become harmful nucleation centers, resulting in poor surface crystal quality, lattice mismatch and enhanced polarization effects, reducing the composition of Al and In in the EBL. Partial doping efficiency, which in turn leads to a decrease in the effective barrier height of the EBL and an increase in the possibility of electron overflow, thereby reducing the luminous efficiency of the light-emitting diode

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