Method and device for removing electrons from surface of oxide layer of floating gate memory

Abstract

A method and apparatus for removing electrons from a surface of a floating gate memory oxide lay are provided, comprises performing a negative pressure weak erase operation on a storage unit of at least one data stack or at least one data block of all data stacks, A negative pressure weak erase operation includes applying a first voltage to a gate of a memory cell of at least one data stack or atleast one data block, A second voltage is applied to the substrate of the memory cells in the at least one data stack or at least one data block, the value of the first voltage being smaller than thevalue of the second voltage, and the source and drain of the memory cells in the at least one data stack or at least one data block are suspended. The embodiment of the invention provides a method anda device for removing electrons on the oxide layer surface of a floating gate memory. The negative pressure weak erasing operation is carried out on a memory cell to remove electrons captured on theoxide layer surface, thereby solving the problem of degradation of the floating gate memory performance after long-term use and prolonging the service life of the floating gate memory.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of non-volatile memory, and in particular to a method and a device for removing electrons from the surface of an oxide layer of a floating gate memory. Background technique [0002] The floating gate memory adopts the floating gate field effect transistor as the basic storage unit, and the oxide layer is used to isolate the floating gate and the channel. The process of writing data is to apply positive voltage to the gate to pull electrons into the floating gate. Electrons remain in the floating gate even after the floating gate memory is powered down. In the process of erasing data, a reverse voltage is applied to the gate, and electrons are pulled out of the floating gate through the tunneling effect. Due to the leakage current of electrons in the floating gate and multiple write or erase operations, electrons will be captured on the surface of the oxide layer to form an electron la...

AI Technical Summary

Problems solved by technology

This electron layer interferes with normal write or erase operations, thereby affecting the performance of floating gate memory

But there is currently no good way to solve this problem

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