High-mobility light-emitting semiconductor and its preparation method, use and application method

A light-emitting semiconductor, high-mobility technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, light-emitting materials, etc., to achieve the effects of high electron mobility and high luminous efficiency

Active Publication Date: 2022-05-03
THE HONG KONG UNIV OF SCI & TECH
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although high-mobility organic semiconductors and high-efficiency organic light-emitting diodes have been well developed, organic semiconductor materials with high mobility and high luminance are still a challenge.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-mobility light-emitting semiconductor and its preparation method, use and application method
  • High-mobility light-emitting semiconductor and its preparation method, use and application method
  • High-mobility light-emitting semiconductor and its preparation method, use and application method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0057] In order to have a clearer understanding of the technical features, purposes and effects of the present invention, the specific implementation manners of the present invention will now be described in detail with reference to the accompanying drawings. Apparently, the described embodiments are only some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0058] The high-mobility aggregation-induced luminescent material is characterized in that it includes the following chemical formula:

[0059]

[0060] R1, R2 and R3 are H or various imide receptors, wherein the receptors specifically include the following structural formula:

[0061]

[0062] R5 is an alkyl chain or glycol chain C n o m h 2n+1O , n=1~24 and m=0~10, the number of C in R...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a high-mobility light-emitting semiconductor and its preparation method, use and application method. The preparation method of the high-mobility light-emitting semiconductor includes Suzuki coupling chemistry between aryl bromide or iodide and aryl boronic acid or borate ester Reaction, the method of applying high-mobility light-emitting semiconductors to devices, the device adopts a bottom-gate top-contact device structure, the gate uses n-type doped silicon, and a layer of 300nm SiO is thermally grown 2 As an insulating layer, before depositing the organic semiconductor layer, the gate insulating layer was modified with OTS in a vacuum furnace at 120°C to form a single-layer OTS modified layer; the modified layer was cleaned with chloroform, n-hexane, isopropanol and acetone successively, and used High-mobility light-emitting semiconductors are coated by spin coating. The material synthesized by the invention exhibits the property of aggregation-induced luminescence, while traditional fluorescent dyes have the phenomenon of aggregation-induced fluorescence quenching under high concentration conditions, thus effectively overcoming the defects of traditional fluorescent dyes.

Description

technical field [0001] The invention belongs to the technical field of organic photoelectric materials, and in particular relates to a high-mobility light-emitting semiconductor and its preparation method, use and application method. Background technique [0002] Organic semiconductors have important applications in many flexible optoelectronic devices such as organic light-emitting diodes, organic field-effect transistors, and organic photovoltaics. Although both high-mobility organic semiconductors and high-efficiency organic light-emitting diodes have been well developed, organic semiconductor materials with high mobility and high luminance are still a challenge. High-mobility organic light-emitting semiconductors can be used to prepare postal light-emitting transistors, pump lasers, etc. In addition, near-infrared organic light-emitting semiconductors have applications in night vision, encrypted displays, and fluorescent probes. Contents of the invention [0003] The ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C07D471/06C09K11/06H01L51/00H01L51/54
CPCC09K11/06C07D471/06C09K2211/1029C09K2211/1007H10K85/60H10K85/6572
Inventor 唐本忠赵征
Owner THE HONG KONG UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap