Unlock instant, AI-driven research and patent intelligence for your innovation.

Method and apparatus for filling a gap

A technology of gap and deposition method, applied in coating, gaseous chemical plating, metal material coating process, etc., can solve problems such as reducing the effectiveness of device isolation

Pending Publication Date: 2019-03-15
ASM IP HLDG BV
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The trade-off in reducing trench depth can be reduced effectiveness in device isolation, while the larger top opening of trenches with tapered sidewalls can consume additional IC footprint

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and apparatus for filling a gap
  • Method and apparatus for filling a gap
  • Method and apparatus for filling a gap

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0036] While certain embodiments and examples are disclosed below, it will be understood by those skilled in the art that the invention extends beyond the specifically disclosed embodiments and / or uses of the invention and obvious modifications and equivalents thereof. Therefore, it is intended that the scope of the disclosed invention should not be limited by the specific disclosed embodiments described hereinafter.

[0037] figure 2 is a flowchart of a method in which one or more gaps formed during fabrication of a feature on a substrate may be filled by deposition method 100 in accordance with at least one embodiment of the present invention. The gaps may be less than 40 or even 20 nm wide. The gaps may be greater than 40, 100, 200 or even 400nm deep.

[0038] The deposition method may comprise, in a first step 110, providing a first reactant to a bottom region of a surface of the one or more gaps. The bottom area of ​​the surface of the one or more gaps may be defined ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method and apparatus for filling one or more gaps created during manufacturing of a feature on a substrate by: providing a bottom area of a surface of the one or more gaps with a first reactant; providing a second reactant to the substrate; and, allowing the first reactant to initiate reaction of the second reactant in the bottom area of the surface in a stoichiometric ratio of one molecule of the first reactant to multiple molecules of the second reactants leaving a top area of the surface of the one or more gaps which was not provided with the first reactant initially substantially empty.

Description

technical field [0001] The present disclosure generally relates to methods and apparatus for manufacturing electronic devices. [0002] More specifically, the present invention relates to a method and apparatus for filling by deposition one or more gaps formed during the fabrication of features on a substrate used to fabricate electronic devices, comprising: [0003] providing a first reactant to surfaces of the one or more interstices; [0004] providing a second reactant to the substrate; and, [0005] The first reactant is allowed to initiate a reaction of the second reactant. Background technique [0006] During the fabrication of integrated circuits on the substrate gap, trenches may be formed in the substrate. Depending on the particular application, refilling the trenches can take various forms. [0007] There can be drawbacks to the basic trench fill process, including the formation of voids in the trench during refill. Voids may form when the refill material fo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/316H01L21/02
CPCH01L21/02145H01L21/02164H01L21/02274H01L21/02214H01L21/022H01L21/0228H01L21/76224C23C16/50C23C16/045C23C16/45536C23C16/45525
Inventor V·珀尔
Owner ASM IP HLDG BV