Tunneling field effect transistor

Abstract

The invention discloses a tunneling field effect transistor. The tunneling field effect transistor comprises a source region, a channel region and a drain region which are connected among a gate electrode, a source electrode and a drain electrode, the source region and the drain region are partitioned through the channel region, the source electrode is an ohmic contact electrode and is in ohmic contact with the source region, and the drain electrode is an ohmic contact electrode and is in ohmic contact with the drain region. The transistor also comprises a metallic first schottky electrode arranged in a floating manner, the first schottky electrode is in schottky contact with the source region, and the first schottky electrode is arranged at the position of a contact surface close to the part between the source region and the channel region. According to the tunneling field effect transistor, a novel source electrode structure composed of the schottky electrode and the source electrodeis designed on the basis of a traditional TFET device, the metallic floating schottky contact electrode with high work function can effectively raise an energy band under the schottky contact electrode effectively, the overlay region of the energy band between a valence band in the source region and a conduction band in the channel region is increased, the tunneling distance is reduced, and the ON state current is improved.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a tunneling field effect transistor. Background technique [0002] With the continuous shrinking of the feature size of semiconductor devices, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices are limited by the sub-threshold swing limit (60mV / dec), high off-state current, short channel effect, etc., reducing the operating voltage will The effect of reducing power consumption cannot be achieved. Since the tunneling field-effect transistor (Tunneling field-effect transistor, TFET) works on the physical mechanism of band-band tunneling, it has lower sub-threshold swing and off-state current, so it is regarded as the most suitable nanoscale MOSFET. One of the strong contenders. However, the low on-state current of TFET greatly limits its application, so how to increase the on-state current of TFET is an urgent problem to be solved. [0003] At present, in ord...

AI Technical Summary

Problems solved by technology

[0002] With the continuous shrinking of the feature size of semiconductor devices, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices are limited by the sub-threshold swing limit (60mV / dec), high off-state current, short channel effect, etc., reducing the operating voltage will Cannot achieve the effect of reducing power consumption

Images