Tunneling Field Effect Transistor

Abstract

The invention discloses a tunneling field effect transistor, comprising: a source region, a channel region and a drain region connected between a gate electrode, a source electrode and a drain electrode; the source region and the drain region are surrounded by a channel region isolated, the source electrode is an ohmic contact electrode and forms an ohmic contact with the source region, and the drain electrode is an ohmic contact electrode and forms an ohmic contact with the drain region; wherein, the transistor also includes a first Schottky electrode of a floating metal material, so The first Schottky electrode forms a Schottky contact with the source region, and the first Schottky electrode is arranged at a position close to the contact surface between the source region and the channel region. In the conventional A new source electrode structure consisting of a Schottky electrode and a source electrode is designed on the basis of the TFET device. The floating Schottky contact electrode of a high work function metal material can effectively lift the energy band under the Schottky contact electrode. , increase the energy band overlap between the valence band of the source region and the conduction band of the channel region, reduce the tunneling distance, and increase the on-state current.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a tunneling field effect transistor. Background technique [0002] With the continuous shrinking of the feature size of semiconductor devices, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices are limited by the sub-threshold swing limit (60mV / dec), high off-state current, short channel effect, etc., reducing the operating voltage will The effect of reducing power consumption cannot be achieved. Since the tunneling field-effect transistor (Tunneling field-effect transistor, TFET) works on the physical mechanism of band-band tunneling, it has lower sub-threshold swing and off-state current, so it is regarded as the most suitable nanoscale MOSFET. One of the strong contenders. However, the low on-state current of TFET greatly limits its application, so how to increase the on-state current of TFET is an urgent problem to be solved. [0003] At present, in ord...

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Problems solved by technology

[0002] With the continuous shrinking of the feature size of semiconductor devices, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices are limited by the sub-threshold swing limit (60mV / dec), high off-state current, short channel effect, etc., reducing the operating voltage will Cannot achieve the effect of reducing power consumption

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