A Longitudinal Tunneling Field Effect Transistor with Improved Subthreshold Swing
A tunneling field effect, sub-threshold swing technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of sub-threshold characteristics of devices, etc., to improve on-state current, increase leakage current, and circuit design. Flexibility-enhancing effects
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Embodiment 1
[0045] A longitudinal tunneling field effect transistor with improved sub-threshold swing according to Embodiment 1 of the present invention, its cross-sectional view can be found in figure 1 , including a semiconductor substrate 1, a source region 2, an intrinsic region 3, a drain region 4, an epitaxial region 5, a gate oxide layer 6, a metal gate 7 and a gate spacer 8, to make an N-type substrate on a P-type substrate Take TFETs as an example.
[0046] Its production process is as follows:
[0047] Step 1: Select the doping concentration as light doping (10 14 ~10 16 cm -3 ) of P-type single crystal silicon as the material of the semiconductor substrate 1, see figure 2 ;
[0048] Step 2: Using an ion implantation process to form mutually independent P ++ type source region 2 and N + Type drain region 4, the region of substrate 1 between source region 2 and drain region 4 forms intrinsic region 3, see image 3 ;
[0049] Step 3: epitaxially grow a thin SiGe epitaxia...
Embodiment 2
[0058] Embodiment 2 of the present invention is a vertical heterojunction tunneling field effect transistor in which the material of the epitaxial region 5 is InAs, and its cross-sectional view can be found in figure 1 , including a semiconductor substrate 1, a source region 2, an intrinsic region 3, a drain region 4, an epitaxial region 5, a gate oxide layer 6, a metal gate 7 and a gate spacer 8, to make an N-type substrate on a P-type substrate Take TFETs as an example. The difference from the fabrication of the first embodiment is that the material of the epitaxial region 5 in the first embodiment is SiGe, and the material of the epitaxial region 5 in this embodiment is InAs.
[0059] Both InAs in Embodiment 2 and SiGe in Embodiment 1 are narrow bandgap materials. The electron affinity of the InAs material is 4.9eV, and the band gap is 0.354eV; the electron affinity of the Si material is 4.05eV, and the band gap is 1.12eV. It can be seen that the valence band positions of ...
Embodiment 3
[0061] Embodiment 3 of the present invention is a complementary vertical tunneling field effect transistor based on a gradually doped epitaxial region. Similar to CMOS, using the proposed gradient doped TFET structure, by adding a small number of masks and only changing the doping type of the corresponding region, N-TFET devices and P-TFET devices can be fabricated on the same substrate to achieve complementary longitudinal tunneling. Through the field effect transistor (TFET), its cross-section see Figure 14 , including semiconductor substrate 1, source region 2, intrinsic region 3, drain region 4, epitaxial region 5, gate oxide layer 6, metal gate 7, sidewall 8, shallow trench isolation STI9, P-epitaxial layer 10, passivation Layer 11 and metal tungsten 12, the production process is as follows:
[0062] Step 1: Select highly doped P-type single crystal silicon (Si) as the material of the semiconductor substrate 1, the resistivity of the semiconductor substrate 1 is 0.009-0...
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