A Tunneling Field Effect Transistor with Electric Field Concentration Effect Enhanced On-state Current

Abstract

The invention provides a tunneling field effect transistor with an electric field concentration effect to enhance the on-state current, which belongs to the field of semiconductor devices. The Tunneling Field Effect Transistor with electric field concentration effect to enhance the on-state current of the present invention includes a semiconductor substrate 1, a source region 2, an intrinsic region 3, a drain region 4, a gate oxide layer 5, a metal gate 6, and sidewalls 9, and further includes The dielectric block 10 located in the intrinsic region, the dielectric block 10 is arranged on the interface between the intrinsic region and the source region, the dielectric block can change the electric field distribution at the tunnel junction position, making the electric field lines at the tunnel junction more concentration, thereby increasing the on-state current.

Description

technical field [0001] The invention belongs to the field of semiconductor devices, and in particular relates to a structure of a tunneling field effect transistor (TFET) which has an electric field concentration effect to enhance an on-state current. Background technique [0002] As the feature size of the traditional MOSFET (Metal Oxide Semiconductor Field Effect Transistor, Metal-Oxide-Semiconductor Field Effect Transistor) continues to shrink, the short-channel effect of the device becomes more and more serious, and the leakage current of the device increases, which makes the device The ratio of the on-state current to the off-state current of the device (that is, the switching ratio Ion / Ioff) continues to decrease, and the problem of power consumption is becoming more and more serious. In order to solve this problem, people began to look for new devices to replace MOSFETs. [0003] TFET (Tunneling Field Effect Transistor, tunneling field effect) transistor is a quantum...

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Problems solved by technology

However, the narrow bandgap material increases the off-state current of the device while increasing the on-state current of the device, which increases the static power consumption of the device.

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