Tunneling field-effect transistor with composite-mechanism strip-type grid and preparation method of tunneling field-effect transistor
A tunneling field effect and transistor technology, which is applied in the manufacture of diodes, semiconductor devices, semiconductor/solid-state devices, etc., can solve the problems of TFET subthreshold slope degradation, limit the application of TFET devices, and the electric field at the tunnel junction is not large enough, etc., to achieve Effect of suppressing short channel effect, improving subthreshold slope, and suppressing bulk leakage current
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[0032] The present invention will be further described below by example. It should be noted that the purpose of the disclosed embodiments is to help further understand the present invention, but those skilled in the art can understand that various replacements and modifications are possible without departing from the spirit and scope of the present invention and the appended claims of. Therefore, the present invention should not be limited to the content disclosed in the embodiments, and the protection scope of the present invention is subject to the scope defined in the claims.
[0033] A specific example of the preparation method of the present invention includes Figure 1 to Figure 5 Process steps shown:
[0034] 1. Select a bulk silicon wafer silicon substrate 1 with a crystal orientation of (1007), the doping concentration of the substrate is lightly doped, and photo-etch the active region pattern of the word "工" on it, as shown in figure 1 (a), figure 1 As shown in...
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