31results about How to "Suppression of bipolar effects" patented technology

The invention discloses a tunneling field-effect transistor with a composite-mechanism strip-type grid and a preparation method of the tunneling field-effect transistor and belongs to the field of logic devices and circuits of field-effect transistors in CMOS (Complementary Metal Oxide Semiconductor) ultra-large-scale integrated (ULSI) circuits. The tunneling field-effect transistor has the advantages that the energy band of surface channels under the grid can be improved by changing the shape of the grid and utilizing a depletion effect of PN nodes on the two sides of the strip-type grid, and the subthreshold characteristic of the device is improved; since a composite mechanism is introduced into double-doped source areas, an ON state current of the device is improved; due to an I-shaped design of an active area, body leakage currents, including a source-drain direct tunneling current and a punching current, between the two doped source areas to a doped drain area can be greatly inhibited, and a short-channel effect is inhibited, so that the device with small size can be applied.

The invention discloses a Z-type heterojunction tunneling field effect transistor having a lightly-doped drain structure and a preparation method thereof, and mainly solves the problems of low on-state current and severe bipolar effect of an existing device. The Z-type heterojunction tunneling field effect transistor comprises an SOI substrate (1), isolation grooves (2), a source region (3), a channel region (4), a drain region (6), a gate region (5) and a conductive layer (7). The isolation grooves (2) are arranged at the two sides of the SOI substrate (1); the source region (3), the channelregion (4) and the drain region (6) are arranged on the upper surface of the SOI substrate; the gate region (5) is arranged on the upper side of the channel region (4); the source region (3) adopts agermanium semiconductor; the gate region (5) adopts a Z-type structure, and gates with the length of 3nm-9nm are covered on the source region; and the side, close to the gate region (5), of the drainregion (6) is provided with a lightly-doped drain region. The Z-type heterojunction tunneling field effect transistor can effectively suppress the bipolar effect and improve driving current, and can be used for manufacturing of a large-scale integrated circuit.

The invention discloses a tunneling field-effect transistor for inhibiting the bipolar effect and a preparation method thereof. In the tunneling field-effect transistor, a drain region and a channel region adopt different semiconductor materials; and the width of a forbidden band of the drain region is larger than that of the forbidden band of the channel region, so that the bipolar effect can be effectively inhibited, the subthreshold leakage current of the device is reduced and simultaneously the on-state current of the device is not influenced. Therefore, the on-state current ratio of the device can be increased, the subthreshold slope of the device is also reduced and the performance of the device is very obviously improved.

The invention discloses an optimized L-type tunneling field effect transistor and a preparation method thereof and mainly solves the problems of low on state current and severe bipolar effect of an existing device. The optimized L-type tunneling field effect transistor comprises an SOI (silicon on insulator) substrate (1), isolation grooves (2), a source region (3), a channel region (4), a drain region (6), a gate region (5) and a conducting layer (7), wherein the isolation grooves (2) are located on two sides of the SOI substrate (1), and the source region (3), the channel region (4) and thedrain region (6) are located on the upper surface of the SOI substrate; the gate region (5) is located on the upper side of the channel region (4); the source region (3) is made of a germanium semiconductor material, the gate region (5) is of a hetero-gate dielectric structure, a high-k dielectric material is adopted on one side close to the source region, and a low-k dielectric material is adopted on one side close to the drain region; a space S is formed between the drain region (6) and the right margin of the gate region (5). The optimized L-type tunneling field effect transistor can effectively inhibit the bipolar effect, increases drive current and can be applied to manufacture of large-scale integrated circuits.

The invention provides a tunneling field effect transistor and a preparation method thereof. The preparation method at least comprises the following steps that an SOI substrate provided with top layer silicon, an oxygen buried layer and bottom layer silicon is provided, and ion injection is conducted on the two sides of the top layer silicon to form a source electrode and a drain electrode respectively; an intrinsic silicon layer, and a grid medium layer and a grid layer are sequentially formed on the surface of the SOI substrate from bottom to top; a stacking structure is formed by etching the intrinsic silicon layer, the grid medium layer and the grid layer through the photoetching and etching technologies, the stacking structure is partially overlapped with the source electrode and is preset distance away from the drain electrode in the horizontal direction. According to the tunneling field effect transistor and the preparation method of the tunneling field effect transistor, the stacking structure is overlapped with the source electrode so that the tunneling area can be increased, and further a driving current is increased. In addition, the stacking structure is preset distance away from the drain electrode in the horizontal direction, and the bipolar effect in the tunneling field effect transistor can be suppressed through the preset distance, and a subthreshold current is reduced.

The invention relates to a PNIN / NPIP type tensile strained germanium on insulator TFET with abrupt tunneling junctions and a preparation method thereof. The preparation method comprises the steps that a tensile strained germanium on insulator substrate is prepared; shallow trench isolation is formed by adopting an etching technology; a drain region pattern is formed on the upper surface of the substrate by adopting a photoetching technology and a drain region is formed by adopting an adhesive ion injection technology; a source region trench is formed on the substrate by adopting the etching technology; ions are injected in the side wall of the source region trench close to a channel region by adopting an inclined ion injection technology so that a thin layer doped region is formed; germanium material is deposited in the source region trench and in-situ doping is performed so that a source region is formed; a gate interface layer, a gate dielectric layer and a front gate layer are formed on the upper surface of the substrate in turn, and a front gate is formed by adopting the etching technology; a back gate layer is grown on the lower surface of the substrate, and a back gate is formed by adopting the etching technology; and a lead-wire window is photoetched, metal is deposited and a lead-wire is photoetched so that a metal lead-wire of the source region, the drain region, the front gate and the back gate is formed, and finally the PNIN / NPIP type tensile strained germanium on insulator TFET with the abrupt tunneling junctions is formed.

The invention relates to an insulation layer upwards-expanded strained germanium tunneling field effect transistor (TFET) with an abrupt tunneling junction and a preparation method. The preparation method comprises the following steps of: preparing an insulation layer upwards-expanded strained germanium substrate; forming shallow groove isolation by an etching process; forming a drain region pattern on the upper surface of the substrate by the etching process, and forming a drain region on the substrate by a glued ion implantation technology; forming a source region groove on the substrate by a dry etching process; depositing a germanium material in the source region groove, and simultaneously carrying out in-situ doping to form a source region; forming a grid interface layer, a grid dielectric layer and a front grid layer on the upper surface of the substrate, and forming a front grid by the dry etching process; growing a back grid layer on the lower surface of the substrate, and forming a back grid by the dry etching process; and carrying out photoetching of a lead window, metal deposition and lead photoetching, forming metal leads of the source region, the drain region, the front grid and the back grid, and finally forming the insulation layer upwards-expanded strained TFET with the abrupt tunneling junction.

The invention relates to a PNIN / NPIP-type UTB-SOI TFET with an abruptly-changed tunnel junction and a preparation method thereof. The method comprises steps of: selecting a UTB-SOI substrate; forming shallow trench isolation in the substrate; forming a drain region in the substrate by using glue ion implantation technology; forming a source region trench in the substrate by using dry etching technology; implanting ions into the sidewall of the source region trench by using inclined ion implantation technology in order to form a thin layer doped zone; depositing intrinsic silicon material in the source region trench and simultaneously performing in-situ doping in order to form a source region; forming a gate dielectric layer and a front gate layer on the top silicon face of the substrate and forming a front gate by using dry etching technology; and photoetching a lead window, depositing metal, photoetching a lead, forming a source region, a drain region, and a front gate metal lead in order to finally form the PNIN / NPIP-type UTB-SOI TFET. The PNIN / NPIP-type UTB-SOI TFET with the abruptly-changed tunnel junction is effectively increased in the driving current and decreased in subthreshold slope, and maintains low leakage current.

The invention relates to an FD-GOI tunneling field effect transistor with an abrupt tunneling junction and a manufacturing method. The manufacturing method comprises: selecting an FD-GOI substrate; forming shallow trench isolation with an etching process; performing photoetching on the FD-GOI substrate to form a drain region graph and forming a drain region with an adhesive ion implantation process; step (d), performing photoetching on the FD-GOI substrate to form a source region graph and forming a source region trench with a dry etching process; step (e), depositing a germanium material in the source region trench and performing in-situ doping at the same time to form a source region with the doping concentration higher than that of the drain region; step (f), forming a gate interface layer, a gate medium layer and a normal gate layer on a top-layer germanium surface of the FD-GOI substrate, and performing etching to form a normal gate; forming a back gate layer on a bottom-layer silicon surface of the FD-GOI substrate, and performing etching to form a back gate; and step (g), photoetching lead windows, depositing metal, and photoetching leads to form metal leads of the source region, the drain region, the normal gate and the back gate, thereby finally forming the FD-GOI tunneling field effect transistor with the abrupt tunneling junction.

The invention discloses an un-doped L-shaped tunneling field effect transistor and a preparation method thereof, which mainly solve the problems of large off-state current, serious bipolar effects andhigh preparation cost of the existing device. The un-doped L-shaped tunneling field effect transistor comprises an SOI substrate (1), a heterogeneous gate dielectric layer (5), a metal layer (6) anda conductive layer (8), wherein two sides of the SOI substrate are provided with isolation grooves (2); the upper surface of the SOI substrate is provided with a source region (3), a channel region (4) and a drain region (7); the heterogeneous gate dielectric layer and the metal layer are located at the upper side of the channel region; the source region, the channel region and the drain region are all made of un-doped intrinsic materials; the gate dielectric layer adopts a heterogeneous gate dielectric material, one side close to the source region adopts a high-K dielectric material and one side close to the drain region adopts a low-K dielectric material; and the metal layer is divided to an upper layer and a lower layer with different work functions, and the two metal layers are isolated by silicon dioxide. The off-state current is reduced, the bipolar effects are suppressed, the preparation cost is saved, and the un-doped L-shaped tunneling field effect transistor can be applied topreparation of a large-scale integrated circuit.

The invention discloses a heterojunction tunneling field effect transistor with a heterogeneous gate dielectric and a manufacturing method thereof, and mainly solves the problems of small on-state current and serious bipolar effect of the existing tunneling field effect transistor. It includes source, gate, drain, source region, channel region and drain region. Carriers enter the channel region through the source and leave the channel region through the drain. The channel region includes "a" part and " 1", the "1" part includes a first connection end connected to the "one" part, and a second connection end opposite to the first connection end, the second connection end is connected to the drain through the drain region, and the "1" part Two gates are arranged on both sides of the two gates, and two first heterogeneous dielectrics are respectively arranged between the two gates and the "1" part, the gates and the first heterogeneous medium are arranged perpendicular to the second heterogeneous medium, and The sum of the heights of the first heterogeneous medium and the second heterogeneous medium is equal to the "1" part, the height of the gate is equal to that of the first heterogeneous medium, and two sources are respectively arranged on both sides of the "1" part.

The invention provides a vertical-channel double-mechanism conduction nano-wire tunneling transistor and a preparation method. The tunneling transistor comprises a hot electron emission source region, a tunneling source region, a channel region, a tunneling drain region and a gate of a nano-wire. The gate is controlled to encircle the channel; band-to-band tunneling happens at the interface of the tunneling source region and the channel region; the hot electron emission source region, the doping type of which is opposite to that of the tunneling source region, is arranged under the tunneling source region; and the electric potential of the tunneling source region is in floating arrangement, and the source terminal potential of a device is added to the hot electron emission source region. Compared with a conventional TFET, the vertical-channel double-mechanism conduction nano-wire tunneling transistor introduces a hot electron emission mechanism besides a tunneling mechanism through the structure design of the device, thereby enlarging the conduction current of the device effectively, meanwhile, keeping steep subthreshold slope, and improving the characteristics of the device substantially. The vertical-channel double-mechanism conduction nano-wire tunneling transistor is simple in preparation process, reduces the production cost greatly, and simplifies the process flow.

The invention discloses a Schottky barrier metal oxide semiconductor (MOS) transistor, which comprises a ring-shaped gate electrode (3), a ring-shaped gate dielectric layer (2), a ring-shaped gate electrode side wall (4), a semiconductor substrate, a source region (5) and a ring-shaped drain region (6). The Schottky barrier MOS transistor is characterized in that: the semiconductor substrate is provided with a convex step structure; the source region is positioned on a high plane of a convex step; the ring-shaped drain region surrounds the convex step and is positioned on a low plane; the gate dielectric layer and the gate electrode are positioned at a corner of the convex step, surrounds the step and is raised into a ring shape; and the gate electrode side wall is ring-shaped, surrounds on the outer side of the gate electrode and has a certain thickness to serve as a shelter to form an underlap structure of a drain terminal. The Schottky barrier MOS transistor adopts a step structurecombining a ring-shaped gate structure and an asymmetric source / drain structure, so on the basis of inheriting advantages of traditional SB-MOSFET, the on-state conduction current is improved, a dipolar effect is inhibited, and the process is simplified.

The invention relates to an ultra-thin-body-silicon-on-insulator (UTB-SOI) tunneling field-effect transistor with an abrupt tunneling junction and a preparation method. The preparation method comprises: selecting a UTB-SOI substrate; forming a shallow trench isolation unit; carrying out photoetching to form a drain region graph and carrying out adhesive ion implantation to form a drain region; carrying out dry etching to form a source region trench; carrying out silicon material deposition in the source region trench and carrying out in-situ doping to form a source region; forming a gate dielectric layer and a front gate layer, and carrying out etching to form a front gate; and carrying out lead window photoetching, metal deposition, and lead photoetching to form source / drain and front gate leads. According to the invention, ion implantation is carried out on the drain region by using an ion implantation process, so that an intrinsic region / drain region junction with the gradually-changed doping concentration gradient can be formed well and the bipolar effect of the tunneling field effect transistor can be effectively inhibited; with the technique and preparation of trench etching and selective epitaxy deposition and filling at the source region, the tunnel junction area can be limited precisely; and on the basis of in-situ doping, the tunnel junction with the steep doping concentration gradient can be formed well and the driving current of the device can be effectively improved and the sub-threshold slope can be reduced.