The invention relates to a PNIN / NPIP type fully-depleted-
silicon-on-insulator (FD-GOI) TFET with an abrupt
tunnel junction and a preparation method thereof. The preparation method comprises: an FD-GOI substrate is selected; an
etching process is carried out to form a shallow-trench isolation unit; a photoetching process is carried out form a drain region graph and an
ion implantation technology is used for forming a drain region; a source region trench is formed in the upper surface of the substrate;
ion implantation is carried out on the side wall of the source region trench by using an angled
ion implantation technology to form a thin-layer
doping region;
germanium material deposition is carried out on the source region trench and in-situ
doping is carried out simultaneously to form a source region; the
doping concentration of the source region is higher than that of the drain region; a gate
interface layer is formed on the upper surface of the substrate; a
gate dielectric layer and a front gate layer grow on the surface of the gate
interface layer and a
dry etching process is used for forming a front gate, a back gate layer grows on the lower surface of the substrate, and a
dry etching process is used for forming a back gate; lead window photoetching,
metal deposition, and lead photoetching are carried out to form
metal leads of the source region, the drain region, the front gate, and the back gate, thereby forming the PNIN / NPIP type FD-GOI TFET with an abrupt
tunnel junction.