Insulation layer upwards-expanded strained germanium tunneling field effect transistor (TFET) with abrupt tunneling junction and preparation method

Abstract

The invention relates to an insulation layer upwards-expanded strained germanium tunneling field effect transistor (TFET) with an abrupt tunneling junction and a preparation method. The preparation method comprises the following steps of: preparing an insulation layer upwards-expanded strained germanium substrate; forming shallow groove isolation by an etching process; forming a drain region pattern on the upper surface of the substrate by the etching process, and forming a drain region on the substrate by a glued ion implantation technology; forming a source region groove on the substrate by a dry etching process; depositing a germanium material in the source region groove, and simultaneously carrying out in-situ doping to form a source region; forming a grid interface layer, a grid dielectric layer and a front grid layer on the upper surface of the substrate, and forming a front grid by the dry etching process; growing a back grid layer on the lower surface of the substrate, and forming a back grid by the dry etching process; and carrying out photoetching of a lead window, metal deposition and lead photoetching, forming metal leads of the source region, the drain region, the front grid and the back grid, and finally forming the insulation layer upwards-expanded strained TFET with the abrupt tunneling junction.

Description

technical field [0001] The invention belongs to the technical field of semiconductor integrated circuits, and in particular relates to a tension-strained germanium TFET on an insulating layer with an abrupt tunnel junction and a preparation method thereof. Background technique [0002] Integrated Circuit (IC for short) technology follows the development of "Moore's Law" and has entered the nanoscale. Challenges from short channel effects, parasitic effects, and quantum tunneling make it increasingly difficult for traditional microelectronic device technology to meet the requirements of IC. The requirement of continuous technological development, especially the increasingly serious power consumption problem, has become the biggest bottleneck in continuing "Moore's Law". [0003] Tunneling Field Effect Transistor (Tunneling Field Effect Transistor, referred to as TFET) adopts the physical mechanism of band-band tunneling, so that its sub-threshold swing is not limited by the l...

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Problems solved by technology

[0005] In order to overcome the problems of low driving current of existing silicon-based TFET devices and the degradation of subthreshold slope relative to the theoretical value, the present invention proposes a tension-strained germanium TFET on an insulating layer with abrupt tunneling junction and its preparation method

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