Pnin/npip type fd-goi TFET with abrupt tunneling junction and preparation method thereof

Abstract

The invention relates to a PNIN / NPIP type fully-depleted-silicon-on-insulator (FD-GOI) TFET with an abrupt tunnel junction and a preparation method thereof. The preparation method comprises: an FD-GOI substrate is selected; an etching process is carried out to form a shallow-trench isolation unit; a photoetching process is carried out form a drain region graph and an ion implantation technology is used for forming a drain region; a source region trench is formed in the upper surface of the substrate; ion implantation is carried out on the side wall of the source region trench by using an angled ion implantation technology to form a thin-layer doping region; germanium material deposition is carried out on the source region trench and in-situ doping is carried out simultaneously to form a source region; the doping concentration of the source region is higher than that of the drain region; a gate interface layer is formed on the upper surface of the substrate; a gate dielectric layer and a front gate layer grow on the surface of the gate interface layer and a dry etching process is used for forming a front gate, a back gate layer grows on the lower surface of the substrate, and a dry etching process is used for forming a back gate; lead window photoetching, metal deposition, and lead photoetching are carried out to form metal leads of the source region, the drain region, the front gate, and the back gate, thereby forming the PNIN / NPIP type FD-GOI TFET with an abrupt tunnel junction.

Description

technical field [0001] The invention belongs to the technical field of semiconductor integrated circuits, and in particular relates to a PNIN / NPIP type FD-GOI TFET with an abrupt tunnel junction and a preparation method. Background technique [0002] The development of Integrated Circuit (IC) technology follows the "Moore's Law" and has entered the nanometer scale. Challenges from short channel effects, parasitic effects, and quantum tunneling make it increasingly difficult for traditional microelectronic device technology to meet The requirements for the continuous development of IC technology, especially the increasingly serious power consumption problem, have become the biggest bottleneck in the continuation of "Moore's Law". [0003] The tunneling field effect transistor (Tunneling Field Effect Transistor, referred to as TFET) adopts the physical mechanism of band-band tunneling, so that its sub-threshold swing breaks through the limitation of the traditional MOSFET sub-...

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Problems solved by technology

[0004] In order to overcome the problems of low driving current of existing silicon-based TFET devices and the degradation of subthreshold slope relative to the theoretical value, the present invention proposes a PNIN / NPIP type FD-GOI TFET with abrupt tunneling junction and its preparation method, which can effectively improve the TFET device drive current as well as reducing the subthreshold slope

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