Self-adaptive composite mechanism tunneling field effect transistor (TFET) and preparation method thereof

Abstract

The present invention relates to the field of tunneling field effect transistor logic devices and circuits in a CMOS ultra large scale integrated (ULSI) circuit. Disclosed are a tunneling field effect transistor and manufacturing method thereof. The tunneling field effect transistor is: for an N type transistor, P+ is injected, on the basis of doping N-, into one side of a doped source area close to the edge of a control gate (3), so that the original doped N- of the injected part is completely compensated as P+; and for a P type transistor, N+ is injected, on the basis of doping P-, into one side of the doped source area close to the edge of the control gate (3), so that the original doped P- of the injected part is completely compensated as N+. Through the doped injection twice of different concentrations into the source area, the device structure of the tunneling field effect transistor effectively combines the characteristics of large conducting current of an MOSFET, thus improving the on-state current of the device, and self-adaptively achieving threshold adjustment of the MOSFET and TFET parts of the device.

Description

technical field [0001] The invention belongs to the field of field-effect transistor logic devices and circuits in CMOS ultra-large integrated circuits (ULSI), and in particular relates to a tunneling field-effect transistor that uses an adaptive method to effectively combine metal-oxide layer-silicon field-effect transistor (MOSFET) currents (TFET) and its preparation method. Background technique [0002] As the size of MOSFET continues to shrink, when it enters the nanometer scale, the negative effects such as the short channel effect of the device become more and more serious, which makes the off-state leakage current of the device continue to increase. At the same time, because the sub-threshold slope of the traditional MOSFET is limited by the thermoelectric potential and cannot be reduced synchronously with the reduction of the device size, there is a theoretical limit of 60mV / dec, which makes the leakage current further increase with the reduction of the power supply ...

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Problems solved by technology

However, due to the limitation of source junction tunneling probability and tunneling area, TFET faces the problem of small on-state current, which is far inferior to traditional MOSFET devices, and TFET has bipolar conduction effect, which greatly limits the performance of TFET devices. application

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