Z-type heterojunction tunneling field effect transistor with lightly doped drain structure and preparation method thereof

Abstract

The invention discloses a Z-type heterojunction tunneling field effect transistor having a lightly-doped drain structure and a preparation method thereof, and mainly solves the problems of low on-state current and severe bipolar effect of an existing device. The Z-type heterojunction tunneling field effect transistor comprises an SOI substrate (1), isolation grooves (2), a source region (3), a channel region (4), a drain region (6), a gate region (5) and a conductive layer (7). The isolation grooves (2) are arranged at the two sides of the SOI substrate (1); the source region (3), the channelregion (4) and the drain region (6) are arranged on the upper surface of the SOI substrate; the gate region (5) is arranged on the upper side of the channel region (4); the source region (3) adopts agermanium semiconductor; the gate region (5) adopts a Z-type structure, and gates with the length of 3nm-9nm are covered on the source region; and the side, close to the gate region (5), of the drainregion (6) is provided with a lightly-doped drain region. The Z-type heterojunction tunneling field effect transistor can effectively suppress the bipolar effect and improve driving current, and can be used for manufacturing of a large-scale integrated circuit.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a Z-type tunneling field effect transistor and a preparation method thereof, which can be used in the manufacture of large-scale integrated circuits. Background technique [0002] With the advancement of semiconductor integration technology, the development of integrated circuit technology following "Moore's law" has entered the nanometer scale. However, challenges from short-channel effects, parasitic effects, and quantum tunneling make it increasingly difficult to scale down conventional CMOS transistors, and it is difficult to meet the requirements of continuous development of integrated circuits. [0003] Tunneling Field Effect Transistor TFET works based on the quantum tunneling effect mechanism of band tunneling. At room temperature, the subthreshold swing can break through the limitation of the traditional MOSFET subthreshold limit value of 60mV / d...

AI Technical Summary

Problems solved by technology

However, compared with MOSFET devices, silicon-based TFET devices still have the problems of low drive current and serious bipolar effect, which limits their application.

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