A multi-active area light-emitting diode with p-i-n tunnel junction

Abstract

The invention discloses a multi-active region light emitting diode having a p-i-n tunnel junction. The diode includes, successively from the bottom to the top, a substrate, a nitride nucleation layer, a nitride buffer layer, an n-type nitride layer, a first light-emitting region, the p-i-n tunnel junction, a second light emitting region, and an indium tin oxide conductive layer. The first light emitting region consists of a first active region, a first p type nitride electronic barrier layer, and a first p type nitride cavity injection layer, and the second light emitting region consists of a second active region, a second p type nitride electronic barrier layer, and a second p type nitride cavity injection layer. According to the invention, the multi-active region light emission is realized, not only the electromigration problem brought by the electrode contact can be reduced, but also the width of the internal depletion region during the working of a traditional tunnel junction can be effectively reduced, and thereby the electronic tunneling distance is reduced, and the electronic tunneling probability is increased; and moreover, the crystal lattice mismatch caused by a traditional heavily doped tunnel junction can be effectively mitigated and the crystal quality of the device can be improved.

Description

technical field [0001] The invention provides a multi-active area light-emitting diode (LED) with p-i-n tunnel junction, which belongs to the field of manufacturing semiconductor optoelectronic materials and devices. Background technique [0002] As a new type of high-efficiency solid-state light source, LED has significant advantages such as energy saving, environmental protection, long life, small size, and low operating voltage. It has been widely used in lighting, display, environmental protection, communication and other fields. [0003] Such as image 3 , In existing LEDs based on III-V compound semiconductor materials, when a forward voltage is applied to the pn junction of the LED, a current will flow through the pn junction. The recombination of electrons and holes in the pn junction transition layer will generate photons. However, because the pn junction of the LED is a doped semiconductor, there are various defects in material quality, dislocation factors and proc...

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Problems solved by technology

[0005] The traditional pn tunnel junction uses heavy doping technology to obtain p + / n + However, in order to obtain a heavily doped p-type nitride layer, the nitride material must be heavily doped with metal Mg, and too high Mg doping will greatly affect the crystal quality of the material, thereby affecting the performance of the LED

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