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Method for improving performance of Bi-Sb-Te-based thermoelectric material

A technology of bi-sb-te and thermoelectric materials, applied in the direction of thermoelectric device junction lead-out materials, thermoelectric device manufacturing/processing, etc., can solve the problems of limited application range and poor thermoelectric performance, and achieve high application value , optimized electrical transport properties, and high mobility

Active Publication Date: 2021-02-23
KUNMING UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present invention provides a method for improving the performance of Bi-Sb-Te-based thermoelectric materials to solve the problem of p-type bismuth telluride in the medium temperature range in the prior art. Bipolar effect, poor thermoelectric performance, which limits its application range

Method used

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  • Method for improving performance of Bi-Sb-Te-based thermoelectric material
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  • Method for improving performance of Bi-Sb-Te-based thermoelectric material

Examples

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Embodiment 1

[0041] A method for improving the performance of Bi-Sb-Te-based thermoelectric materials, comprising the following steps:

[0042] Step 1: In a glove box filled with an argon protective atmosphere, put Te grains, Sb grains, Bi powder and Cu powders with a purity of not less than 99.99% (mass fraction) 1.8 S powder, according to the general chemical formula is Bi 0.42 Sb 1.58 Te 3 (Cu 1.8 S) x Weigh each component (total mass is 16g), wherein x is 0.3%, put into the quartz tube and vacuumize, keep the absolute vacuum degree less than 10 after vacuum -4 Pa, encapsulated with oxyhydrogen flame.

[0043] Step 2: Place the quartz tube in step 1 in a vertical tube furnace and heat it from room temperature to 650 °C at a heating rate of 100 °C per hour, keep it warm for 5 hours, and then raise the temperature of the quartz tube from 650 °C to 950 °C at the same heating rate ℃ for 16 hours, and then cooled with the furnace to obtain the initial ingot.

[0044]Step 3: Put the in...

Embodiment 2～3

[0047] The difference from Example 1 is that Cu 1.8 The content of S is different, wherein x=0.05% in embodiment 2; x=0.1% in embodiment 3.

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Abstract

The invention relates to the technical field of thermoelectric materials, and particularly discloses a method for improving the performance of a BiSbTe-based thermoelectric material. The method comprises the following steps: weighing Te particles, Sb particles, Bi powder and Cu1.8S powder according to a chemical general formula Bi0.42Sb1.58Te3(Cu1.8S)x, filling a quartz tube with the Te particles,the Sb particles, the Bi powder and Cu1.8S powder, and performing vacuumizing, wherein x is greater than 0 and less than or equal to 0.3%; putting the quartz tube into a vertical tube furnace, carrying out heat preservation for 15-20 hours at the temperature of 900-1,000 DEG C, and carrying out furnace cooling to obtain an initial cast ingot; grinding the cast ingot by adopting a high-energy ballmill to obtain powder; and performing heat preservation of the powder for 4-8 min at the temperature of 410-450 DEG C and the sintering pressure of 40-60 MPa through a spark plasma sintering process,and obtaining the BiSbTe-based thermoelectric material, wherein the material has high conductivity, the bipolar effect is remarkably inhibited, the ZT value is increased, and the temperature for obtaining the highest ZT value is regulated and controlled.

Description

technical field [0001] The invention relates to the technical field of thermoelectric materials, in particular to a method for improving the performance of Bi-Sb-Te-based thermoelectric materials. Background technique [0002] Thermoelectric devices, as a new type of energy material with no pollution, low working noise, no transmission parts, long service life and high reliability, can use the Seebeck effect and the Peltier effect to use the directional movement of carriers inside the solid Direct mutual conversion of thermal energy and electrical energy is a new technology applied to thermoelectricity generation and refrigeration using unidirectional current, and it is a new green energy technology with great application prospects in the future. [0003] The energy conversion efficiency of thermoelectric materials is usually characterized by the dimensionless thermoelectric figure of merit, ZT=σα 2 T / κ, where T is the absolute temperature, α is the Seebeck coefficient, σ i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/34H01L35/16H01L35/18H10N10/01H10N10/852H10N10/853
CPCH10N10/852H10N10/853H10N10/01
Inventor 葛振华梁昊冯晶朱钰可杨星杨俊旋王子渊
Owner KUNMING UNIV OF SCI & TECH
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