Fd-goi tunneling field-effect transistor with abrupt tunneling junction and preparation method thereof

Abstract

The invention relates to an FD-GOI tunneling field effect transistor with an abrupt tunneling junction and a manufacturing method. The manufacturing method comprises: selecting an FD-GOI substrate; forming shallow trench isolation with an etching process; performing photoetching on the FD-GOI substrate to form a drain region graph and forming a drain region with an adhesive ion implantation process; step (d), performing photoetching on the FD-GOI substrate to form a source region graph and forming a source region trench with a dry etching process; step (e), depositing a germanium material in the source region trench and performing in-situ doping at the same time to form a source region with the doping concentration higher than that of the drain region; step (f), forming a gate interface layer, a gate medium layer and a normal gate layer on a top-layer germanium surface of the FD-GOI substrate, and performing etching to form a normal gate; forming a back gate layer on a bottom-layer silicon surface of the FD-GOI substrate, and performing etching to form a back gate; and step (g), photoetching lead windows, depositing metal, and photoetching leads to form metal leads of the source region, the drain region, the normal gate and the back gate, thereby finally forming the FD-GOI tunneling field effect transistor with the abrupt tunneling junction.

Description

technical field [0001] The invention belongs to the technical field of semiconductor integrated circuits, and in particular relates to an FD-GOI tunneling field effect transistor with an abrupt tunneling junction and a preparation method. Background technique [0002] The development of Integrated Circuit (IC) technology follows the "Moore's Law" and has entered the nanometer scale. Challenges from short channel effects, parasitic effects, and quantum tunneling make it increasingly difficult for traditional microelectronic device technology to meet The requirements for the continuous development of IC technology, especially the increasingly serious power consumption problem, have become the biggest bottleneck in the continuation of "Moore's Law". [0003] The tunneling field effect transistor (Tunneling Field Effect Transistor, referred to as TFET) adopts the physical mechanism of band-band tunneling, so that its subthreshold swing is not limited by the limit value KT / q of t...

AI Technical Summary

Problems solved by technology

[0005] In order to overcome the problems of low driving current of existing silicon-based TFET devices and the degradation of subthreshold slope relative to the theoretical value, the present invention proposes a FD-GOI tunneling field effect transistor with abrupt tunneling junction and its preparation method

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