Doped-free l-shaped tunneling field-effect transistor and its preparation method

Abstract

The invention discloses an un-doped L-shaped tunneling field effect transistor and a preparation method thereof, which mainly solve the problems of large off-state current, serious bipolar effects andhigh preparation cost of the existing device. The un-doped L-shaped tunneling field effect transistor comprises an SOI substrate (1), a heterogeneous gate dielectric layer (5), a metal layer (6) anda conductive layer (8), wherein two sides of the SOI substrate are provided with isolation grooves (2); the upper surface of the SOI substrate is provided with a source region (3), a channel region (4) and a drain region (7); the heterogeneous gate dielectric layer and the metal layer are located at the upper side of the channel region; the source region, the channel region and the drain region are all made of un-doped intrinsic materials; the gate dielectric layer adopts a heterogeneous gate dielectric material, one side close to the source region adopts a high-K dielectric material and one side close to the drain region adopts a low-K dielectric material; and the metal layer is divided to an upper layer and a lower layer with different work functions, and the two metal layers are isolated by silicon dioxide. The off-state current is reduced, the bipolar effects are suppressed, the preparation cost is saved, and the un-doped L-shaped tunneling field effect transistor can be applied topreparation of a large-scale integrated circuit.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, in particular to an L-shaped tunneling field-effect transistor, which is suitable for the manufacture of large-scale integrated circuits. Background technique [0002] Under the impetus of "Moore's Law", semiconductor integrated circuit technology develops rapidly and enters the nanometer dimension. However, as the size shrinks, the existence of short channel effects, parasitic effects and traps makes the performance of traditional MOSFETs seriously degrade when the size shrinks, which cannot meet the requirements of integrated circuit development. [0003] The Tunneling Field Effect Transistor (TFET) works on the basis of the band-to-band tunneling quantum tunneling effect mechanism, which theoretically breaks through the limit value of 60mV / decade of the subthreshold swing of the traditional MOSFET at room temperature. Therefore, TFET devices have fast switching characteristics a...

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Problems solved by technology

Such a process will inevitably cause damage to the device, resulting in a higher concentration of traps

The existence of traps will degrade the sub-threshold swing and off-state current of the device, thereby reducing the switching speed of the device and increasing the static power consumption of the device, resulting in high cost of device preparation and limiting the application of the device

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