Optimized l-type tunneling field effect transistor and its preparation method

Abstract

The invention discloses an optimized L-type tunneling field effect transistor and a preparation method thereof and mainly solves the problems of low on state current and severe bipolar effect of an existing device. The optimized L-type tunneling field effect transistor comprises an SOI (silicon on insulator) substrate (1), isolation grooves (2), a source region (3), a channel region (4), a drain region (6), a gate region (5) and a conducting layer (7), wherein the isolation grooves (2) are located on two sides of the SOI substrate (1), and the source region (3), the channel region (4) and thedrain region (6) are located on the upper surface of the SOI substrate; the gate region (5) is located on the upper side of the channel region (4); the source region (3) is made of a germanium semiconductor material, the gate region (5) is of a hetero-gate dielectric structure, a high-k dielectric material is adopted on one side close to the source region, and a low-k dielectric material is adopted on one side close to the drain region; a space S is formed between the drain region (6) and the right margin of the gate region (5). The optimized L-type tunneling field effect transistor can effectively inhibit the bipolar effect, increases drive current and can be applied to manufacture of large-scale integrated circuits.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to an optimized L-type tunneling field effect transistor and a preparation method thereof, which can be used in the manufacture of large-scale integrated circuits. Background technique [0002] With the advancement of semiconductor integration technology, the development of integrated circuit technology following "Moore's law" has entered the nanometer scale. However, challenges from short-channel effects, parasitic effects, and quantum tunneling make it increasingly difficult to scale down conventional CMOS transistors, and it is difficult to meet the requirements of continuous development of integrated circuits. [0003] Tunneling Field Effect Transistor TFET works based on the quantum tunneling effect mechanism of band tunneling. At room temperature, the subthreshold swing can break through the limitation of the traditional MOSFET subthreshold limit valu...

AI Technical Summary

Problems solved by technology

However, compared with MOSFET devices, silicon-based TFET devices still face the problems of small driving current and serious bipolar effect, which limits their application.

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