The invention provides a trench gate MOSFET device with an electric field shielding structure, which comprises a substrate, a source electrode, a drain electrode, a gate trench, the electric field shielding structure, source electrode regions, a semiconductor region with a first conduction type, and one or more electric field shielding structures with a second conduction type positioned below the surface of the semiconductor region, the electric field shielding structures intersect with the side wall of the gate trench at an angle, and the source electrode regions are positioned on two sides or the periphery of the gate trench, and are divided into a plurality of source sub-regions by an electric field shielding structure. By arranging one or more electric field shielding structures intersecting with the side wall of the gate trench and reasonably arranging the arrangement mode of the electric field shielding structures, the cell size of the device can be effectively reduced, the channel density and the device conduction current density can be improved, the specific on-resistance of the device can be reduced, and the device conduction performance can be improved; meanwhile, the electric field shielding effect is enhanced, the electric field intensity in the gate oxide layer is reduced, and the long-term working stability and reliability of the device are improved.