Exposure apparatus, exposure method, and device manufacturing method

A technology of exposure device and light source, applied in the field of lithography system and process, can solve the problem of lithography equipment being unable to switch modes and the like

Active Publication Date: 2020-10-16
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to provide an optical lens module to solve the following problems in the prior art: the lithography equipment cannot perform mode conversion for the different requirements of high resolution and high yield; and how to avoid the use of mercury lamps as light sources problems and optimize image quality results

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Exposure apparatus, exposure method, and device manufacturing method
  • Exposure apparatus, exposure method, and device manufacturing method
  • Exposure apparatus, exposure method, and device manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] The exposure device proposed by the present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0033] This embodiment provides a specific implementation of the exposure device.

[0034] figure 1 It is a schematic diagram of the connection relationship of an exposure device provided in the embodiment of the present invention; figure 2 It is a structural schematic diagram and a schematic optical path diagram of an optical lens module under the first numerical aperture in Embodiment 1 of the present invention; image 3 It is a structural schematic diagram and a schematic optical...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
refractive indexaaaaaaaaaa
Login to view more

Abstract

The invention discloses an exposure device which comprises an optical lens module and a lighting module, wherein the optical lens module is provided with an aperture diaphragm, and the aperture diaphragm is used for adjusting a numerical aperture of the optical lens module to enable the optical lens module to have a first numerical aperture and a second numerical aperture, wherein the first numerical aperture is greater than the second numerical aperture; and the lighting module is used for providing a first lighting source and a second lighting source, a center wavelength of the first lighting source is smaller than a center wavelength of the second lighting source, and a spectral line width of the second lighting source is greater than a spectral line width of the first lighting source.According to the invention, switching between a high-resolution mode and a high-yield mode is implemented by selection and switching of the numerical apertures and the lighting sources. Further, by adopting an exposure method of the exposure device and a manufacturing method of an element, which are provided by the invention, switching between the high-resolution mode and the high-yield mode canbe implemented.

Description

technical field [0001] The invention relates to a photolithography system and technology in the field of semiconductor preparation, in particular to an optical lens module. Background technique [0002] With the development of semiconductor technology, the size of semiconductor devices continues to shrink. Correspondingly, various preparation processes in the field of semiconductor preparation also have higher requirements for process nodes, and higher-precision process equipment is required to meet the requirements of the process. demanding. [0003] At present, in the back-end packaging field of semiconductor processing and manufacturing, the requirements for the resolution of photolithography processes are getting higher and higher, from the previous common 3-10 μm to 1-3 μm, and there are even process requirements below 1 μm. Although high resolution has become the pursuit in the production process, however, in the actual production process, production efficiency is als...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20
CPCG03F7/70008G03F7/70058
Inventor 孙晶露田毅强
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap