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Plasma processing apparatus and method and program for controlling elevation of focus ring

A plasma and processing device technology, applied in the field of ion plasma processing devices, can solve the problems of reduced etching characteristics and affecting uniformity, and achieve the effect of suppressing the deviation of etching characteristics

Active Publication Date: 2019-04-19
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, when the height positions of the plasma sheath on the focus ring and the plasma sheath on the wafer deviate, the etching characteristics near the outer periphery of the wafer will decrease, affecting uniformity, etc.

Method used

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  • Plasma processing apparatus and method and program for controlling elevation of focus ring
  • Plasma processing apparatus and method and program for controlling elevation of focus ring
  • Plasma processing apparatus and method and program for controlling elevation of focus ring

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Experimental program
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no. 1 approach

[0052] [Structure of plasma processing apparatus]

[0053] First, a schematic configuration of plasma processing apparatus 10 according to the first embodiment will be described. figure 1 is a schematic cross-sectional view showing a schematic configuration of the plasma processing apparatus. The plasma processing apparatus 10 has a processing container 1 configured airtight and set at a ground potential. The processing container 1 has a cylindrical shape and is formed of, for example, aluminum with an anodized film formed on its surface. The processing container 1 is provided with a processing space for generating plasma. A first stage 2 for horizontally supporting a wafer W which is a work-piece is accommodated in the processing container 1 .

[0054] The first mounting table 2 has a substantially cylindrical shape with a bottom facing in the vertical direction, and the upper bottom is used as a mounting surface 6 d on which the wafer W is mounted. The mounting surface 6...

no. 2 approach

[0129] Next, a second embodiment will be described. The plasma processing apparatus 10 of the second embodiment and Figure 1 to Figure 3 The configuration of the plasma processing apparatus 10 according to the first embodiment shown is the same, and therefore description thereof will be omitted.

[0130] The control unit 100 of the second embodiment will be described in detail. Figure 14 It is a block diagram showing a schematic configuration of a control unit controlling the plasma processing apparatus according to the second embodiment. The control unit 100 of the second embodiment is Figure 6 The control unit 100 of the first embodiment shown has substantially the same configuration, so the same reference numerals are assigned to the same parts and descriptions thereof will be omitted, and the different parts will be mainly described.

[0131] The storage unit 163 stores state information 163a, first relationship information 163b, and second relationship information 1...

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PUM

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Abstract

The invention provides a plasma processing apparatus and a method and program for controlling elevation of a focus ring. A first mounting table (2) mounts a wafer (W) as a plasma processing target. Anelevation mechanism (120) vertically moves a focus ring (5) surrounding the wafer (W). An acquisition unit acquires state information indicating a measured state of the wafer (W). A calculation unitcalculates a height of the focus ring at which positional relation between an upper surface of the wafer (W) and an upper surface of the focus ring (5) satisfies a predetermined distance based on thestate of the wafer (W) that is indicated by the state information acquired by the acquisition unit. The elevation control unit controls the elevation mechanism (120) to vertically move the focus ring(5) to the height calculated by the calculation unit.

Description

technical field [0001] Various aspects and embodiments of the present invention relate to a plasma processing apparatus, a method for controlling elevation of a focus ring, and a program for controlling elevation of a focus ring. Background technique [0002] Conventionally, there is known a plasma processing apparatus that performs plasma processing such as etching on an object to be processed such as a semiconductor wafer (hereinafter also referred to as a “wafer”) using plasma. When the plasma processing apparatus performs plasma processing, the components in the chamber will be consumed. For example, the focus ring provided on the outer peripheral portion of the wafer in order to homogenize the plasma may be relatively close to the plasma and may be consumed quickly. The degree of wear of the focus ring has a large impact on the on-wafer processing results. For example, when the height positions of the plasma sheath on the focus ring and the plasma sheath on the wafer ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32H01L21/3065
CPCH01J37/32431H01J37/32642H01L21/3065H01L21/67109H01L21/67248H01L21/67259H01L21/6831H01L21/68735H01L21/68742H01L21/67253H01L21/67103H01J37/3299H01J37/32935H01L21/67069H01L21/6833H01J2237/334H01J2237/2446H01J2237/24495H01J2237/24578H01J2237/21H01J37/32724H01J37/32H01J37/32091
Inventor 斋藤祐介大岩德久
Owner TOKYO ELECTRON LTD