A homogeneous body-confined resistive variable memory and its preparation method
A technology of resistive variable memory and homogeneous body, applied in the direction of electrical components, etc., can solve problems such as uneven interface restrictions, poor stability, and restrictions on the application of memory, and achieve the effect of improving the characteristics of resistive variable retention
Active Publication Date: 2020-08-28
HENAN UNIVERSITY
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Problems solved by technology
That is, the STO single crystal resistive memory proposed by Wrier et al. is a non-uniform interface-limited resistive memory, which has the disadvantages of not being easy to integrate randomly and having poor stability.
[0005] In addition, based on the STO single crystal substrate resistive memory with only oxygen vacancies, when it is in an oxidizing environment, oxygen atoms will diffuse into the STO to re-oxidize the oxygen-deficient STO to an insulating state, which will seriously affect the retention of the resistive variable memory. characteristics, this problem seriously restricts the application of this type of memory
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[0033] Describe the present invention in further detail below by embodiment 1, but this is not limitation of the present invention, can make various modifications and improvements according to the basic idea of the present invention, but as long as not departing from the basic idea of the present invention, all in the present invention within range.
[0034] 1) Provide a (00l) oriented single-sided polished STO single crystal substrate W with a bevel angle of 0.5° and a surface roughness as small as 5 angstroms;
[0035] 2) Clean the STO single crystal substrate W with acetone, alcohol and deionized water in an ultrasonic cleaner for 10 minutes respectively.
[0036] 3) Select the polished surface as the upper surface, and perform a local annealing process on the STO single crystal substrate W; form an oxygen-deficient region 1 in the middle of the STO single-crystal substrate W, surrounded by unannealed STO single crystal materials on the sides and bottom of the oxygen-de...
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Abstract
The invention provides a SrTiO3 (STO) single crystal substrate homogeneous body limiting type resistive random access memory based on only existence of oxygen vacancy and a preparation method thereof.The structure of the memory takes an STO single crystal as a substrate. An anoxic region is formed in the center of the upper surface of the substrate through local annealing. The non-annealed STO single crystal material on the side surface and the bottom surface of the anoxic region form a surrounding region. An upper electrode structure layer in ohmic contact with the anoxic region is arrangedon the upper surface after the local annealing is completed. A lower electrode layer is deposited on a rough lower surface which is not doped with the STO single crystal substrate. The memory can effectively prevent oxygen atoms from diffusing into the STO in an oxidation environment. The retention characteristic of the resistive random access memory is improved.
Description
technical field [0001] The invention belongs to the field of semiconductor non-memory in ultra-large integration scale, and in particular relates to a uniform body-limited resistive variable memory and a preparation method thereof. Background technique [0002] Resistive variable memory is a new type of memory device that stores data by changing the resistance value of the resistive material by applying voltages of different polarities and magnitudes. Distinguished from the active area that produces the resistive switch, it can be divided into uniform and non-uniform resistive switches. The working material in the uniform switch is completely uniform, and the resistivity at different positions is the same, and the resistance of each part of the material changes synchronously under the action of the electric field. However, in the current research, inhomogeneous resistance switching is more common, which means that the resistivity of most positions of the sample remains unch...
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IPC IPC(8): H01L45/00
Inventor 魏凌罗明王茜
Owner HENAN UNIVERSITY