A method and system for improving the accuracy of capacitance value

A capacitance value and precision technology, applied in the field of semiconductor production machine parameter control, can solve problems such as low machine adjustment efficiency, save manual adjustment time, improve accuracy, and achieve the effect of automatic adjustment

Active Publication Date: 2021-06-18
福建省福联集成电路有限公司
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0007] For this reason, it is necessary to provide a method and system for improving the accuracy of capacitor capacitance, so as to solve the problem of low efficiency of existing machine adjustment

Method used

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  • A method and system for improving the accuracy of capacitance value
  • A method and system for improving the accuracy of capacitance value

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Embodiment Construction

[0045] In order to explain the technical content, constructive features, the purpose and effects of the technical solution, and the specific embodiments are described below, and the accompanying drawings will be described in detail.

[0046] See Figure 1 to 2 This embodiment provides a method of improving capacitive capacitance value, which can be applied figure 2 System on the system. The main body of the method can be an independent total controller on the system, and the total controller acts as a forwarding and timing of the timing. Alternatively, each step can also be performed by each module. The method includes step S101 driving wafer transmission module transfer wafer to wafer preheating chamber; step S102 drives the wafer preheating chamber to heat the wafer; heating can be the bottom surface of the wafer Then, the heat is conducted through the wafer bottom surface to the wafer top. Step S103 drives the wafer transfer module to transfer the heated wafer to the infrared im...

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Abstract

The invention discloses a method and system for improving the accuracy of capacitance value, wherein the method includes the following steps: driving the wafer transfer module to transfer the wafer to the wafer preheating chamber group; driving the wafer preheating chamber group to heat the wafer ;Drive the wafer transfer module to transfer the heated wafer to the infrared imaging module; drive the infrared imaging module to take infrared photos of the wafer surface; drive the communication module to transmit the infrared photos of the wafer to the data analysis and processing center; And calculate the film thickness, and automatically used for dielectric layer deposition, so that the automatic adjustment of deposition parameters can be realized, the accuracy of capacitance value is improved, and the manual adjustment time is saved.

Description

Technical field [0001] The present invention relates to the field of semiconductor production machine parameters, and more particularly to a method and system for improving capacitive capacitance value accuracy. Background technique [0002] The main process parameters of the existing chemical vapor deposition method have: [0003] (1) temperature. Temperature has a great influence on the growth rate of chemical vapor deposited films. [0004] (2) Reactive input and ratio. Gas composition ratio will affect coating quality and growth rate. [0005] (3) Pressure. The pressure affects chemical vapor deposition reaction efficiency, film formation quality and uniformity of film layer thickness. [0006] The components of the chemical vapor deposited machine are provided with a monitoring module of the above major process parameters, which can meet the production needs according to the performance requirements of the sedimentary film. The existing GaAs-based thin film capacitance struc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N25/00G01J5/00G01B7/06C23C16/52
CPCC23C16/52G01B7/085G01J5/00G01J2005/0077G01N25/00
Inventor 林锦伟林伟铭钟艾东甘凯杰翁佩雪郭文海邓丹丹赵玉会
Owner 福建省福联集成电路有限公司
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