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Calculation method and system for junction temperature of IGBT module

A calculation method and technology of a calculation system, applied in the field of transistors, can solve the problems of inaccurate prediction results, prediction of junction temperature out of practical application, and failure to consider the temperature effect of cooling system, etc., and achieve the effect of accurate results.

Active Publication Date: 2019-08-16
SHANGHAI JINMAI ELECTRONICS TECH
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Problems solved by technology

[0004] The purpose of the present invention is to overcome the defects of the prior art, to provide a calculation method and system of IGBT module junction temperature, to solve the problem that the existing IGBT module junction temperature calculation method does not consider the influence of the cooling system on the temperature, so that the prediction of the junction temperature is out of date. Practical applications, inaccurate predictions

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  • Calculation method and system for junction temperature of IGBT module
  • Calculation method and system for junction temperature of IGBT module
  • Calculation method and system for junction temperature of IGBT module

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Embodiment Construction

[0065] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0066] refer to figure 1 , the present invention provides a method and system for calculating the junction temperature of an IGBT module, which is used to calculate the junction temperature of an IGBT module including a plurality of IGBT chips and a plurality of diodes, and is used to solve the practical application problem of the IGBT module. The module provides the most valuable junction temperature calculation results in practical applications. According to the working parameters of the IGBT module, the present invention establishes a suitable thermal network model to calculate the junction temperature. When establishing the thermal network equation, a single IGBT chip and a single diode are used as thermal nodes, and the IGBT chip and diode are mapped on the surface of the cooling water pipe and the surface of the cooling water. The temper...

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Abstract

The invention relates to a calculation method and system for a junction temperature of an IGBT module. The calculation method comprises the steps of acquiring an initial junction temperature of the IGBT module; calculating the loss of the IGBT module; establishing a heat network equation for heat transfer of the IGBT module according to a heat transfer relation between the IGBT module and a cooling system, and substituting the loss of the IGBT module into the established heat network equation to calculate temperature rise of the IGBT module; and adding the temperature rise of the IGBT module and the initial junction temperature of the corresponding IGBT module to obtain the junction temperature of the IGBT module. By means of the established heat network equation, the influence of the cooling system on the junction temperature of the IGBT module is fully considered, so that a result of junction temperature estimation is more accurate. The problem that existing junction temperature prediction is incomprehensive and inaccurate due to the fact that the cooling system is not considered is solved.

Description

technical field [0001] The invention relates to the technical field of transistors, in particular to a method and system for calculating the junction temperature of an IGBT module. Background technique [0002] IGBT modules are currently widely used power devices, and their importance is self-evident. However, during the working process of the power device, its operating temperature cannot exceed its junction temperature, otherwise it will cause damage to the device. According to previous statistical data, the junction temperature of the IGBT is too high when it is working, exceeding its allowable maximum junction temperature, which usually causes permanent irreversible failure. At the same time, working at high temperature for a long time will affect the life of the IGBT; but if the operating temperature is controlled to be too low, the IGBT will not be able to exert its maximum efficiency. Therefore, in order to reduce the junction temperature of the IGBT module in use, ...

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Application Information

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IPC IPC(8): G01R31/26G06F17/50
CPCG01R31/2601G06F30/20
Inventor 韩伟张国亮任广辉於挺殷桂来孙彦超
Owner SHANGHAI JINMAI ELECTRONICS TECH
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