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A kind of solar cell absorption layer and its preparation method and application

A technology for solar cells and absorbing layers, applied in the field of solar cells, can solve problems such as uneven film composition, difficult-to-sulfur antimony selenide film, and poor film crystallinity, and achieve easy control of film composition and thickness, and simple preparation equipment and processes , The uniformity of the film is good

Active Publication Date: 2021-03-09
UNIV OF SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The vacuum method has high requirements on equipment, and the obtained film composition may be uneven
The traditional solution method is simple to operate, but the crystallinity of the film is poor, and most of them need subsequent selenization, it is difficult to prepare antimony sulfur selenide film in one step, and the process is complicated

Method used

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  • A kind of solar cell absorption layer and its preparation method and application
  • A kind of solar cell absorption layer and its preparation method and application
  • A kind of solar cell absorption layer and its preparation method and application

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preparation example Construction

[0032] The invention provides a method for preparing a solar cell absorbing layer, comprising the following steps:

[0033] A) mixing antimony potassium tartrate, sodium thiosulfate and sodium selenosulfate with water to obtain a deposition solution;

[0034] B) the deposition solution is subjected to a hydrothermal reaction on the surface of the substrate to obtain an antimony sulfoselenide film compounded on the surface of the substrate;

[0035] C) performing annealing treatment on the obtained antimony sulfur selenide thin film in an inert gas environment to obtain a solar cell absorbing layer.

[0036] The present invention firstly prepares a deposition solution, specifically, dissolving antimony potassium tartrate and sodium thiosulfate in water to obtain a mixed solution;

[0037] An aqueous solution of sodium selenosulfate is added to the mixed solution to obtain a deposition solution required for depositing an antimony sulfur selenide film.

[0038] The aqueous solu...

Embodiment 1

[0064] 1) Clean the FTO conductive glass substrate: clean the substrate with ultrapure water, ethanol, isopropanol, and acetone in sequence for 15 minutes ultrasonically, and then clean it with oxygen plasma for 15 minutes. Deposit a CdS thin film on a clean substrate.

[0065] 2) Place the substrate obliquely in the hydrothermal reactor. Preparation of deposition solution: take a 50mL beaker, first add 40mL deionized water, then add 0.2671g antimony potassium tartrate, stir until dissolved with a stirring bar. Then add 0.7936 g of sodium thiosulfate, stir for 60 s, then add 100 μL of 0.1 M sodium selenosulfate solution, and continue stirring for 120 s to obtain a deposition solution. At this time, the concentration of antimony potassium tartrate in the deposition solution is 0.02M, the concentration of sodium thiosulfate is 0.08M, and the concentration of sodium selenosulfate is 0.00025M.

[0066] 3) Pour the deposition liquid obtained in step 2) into a hydrothermal reactio...

Embodiment 2

[0070] 1) Clean the FTO conductive glass substrate: clean the substrate with ultrapure water, ethanol, isopropanol, and acetone in sequence for 15 minutes ultrasonically, and then clean it with oxygen plasma for 15 minutes. Deposit a CdS thin film on a clean substrate.

[0071] 2) Place the substrate obliquely in the hydrothermal reactor. Preparation of deposition solution: take a 50mL beaker, first add 40mL deionized water, then add 0.2671g antimony potassium tartrate, stir until dissolved with a stirring bar. Then add 0.7936 g of sodium thiosulfate, stir for 60 s, then add 200 μL of 0.1 M sodium selenosulfate solution, and continue stirring for 120 s to obtain a deposition solution. At this time, the concentration of antimony potassium tartrate in the deposition solution is 0.02M, the concentration of sodium thiosulfate is 0.08M, and the concentration of sodium selenosulfate is 0.0005M.

[0072] 3) Pour the deposition liquid obtained in step 2) into a hydrothermal reaction...

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Abstract

The invention provides a method for preparing a solar cell absorbing layer, comprising the following steps: A) mixing antimony potassium tartrate, sodium thiosulfate and sodium selenosulfate with water to obtain a deposition solution; B) depositing the deposition solution on the substrate performing a hydrothermal reaction on the bottom surface to obtain an antimony sulfoselenide film compounded on the substrate surface; C) annealing the obtained antimony sulfoselenide film in an inert gas environment to obtain a solar cell absorbing layer. The invention uses a hydrothermal method to directly deposit antimony sulfur selenide film without subsequent selenization, and solves the problem that most solution methods require subsequent selenization. By changing the concentration of sodium thiosulfate and sodium selenosulfate in the deposition solution, the band gap of the film can be adjusted conveniently, and the antimony sulfoselenide film with adjustable band gap can be obtained. Compared with other methods, the invention has simple preparation equipment and process, good film crystallinity, easy control of film composition and thickness, and good film uniformity.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a solar cell absorbing layer and a preparation method and application thereof. Background technique [0002] As a class of inorganic light-absorbing materials, the application of antimony sulfoselenide in solar cells has attracted more and more attention. The elements contained in this kind of material are very rich in storage, non-toxic, and have a large absorption coefficient (≈10 5 cm -1 ) and a suitable optical bandgap (1.03-1.8eV). Most importantly, the compound has good water and oxygen stability. Since antimony sulfide and antimony selenide have the same crystal structure, the bandgap of the material can be flexibly adjusted by adjusting the ratio of the two elements of sulfur and selenium, thereby obtaining a light-absorbing material with an ideal optical bandgap. Therefore, this type of material has great application prospects. [0003] At present, t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/032H01L31/0392H01L31/0445H01L31/18
CPCH01L31/032H01L31/0392H01L31/18H01L31/186H01L31/0445Y02E10/50Y02P70/50
Inventor 高迪陈涛朱长飞江国顺
Owner UNIV OF SCI & TECH OF CHINA
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