Process chambers and semiconductor processing equipment

Abstract

The invention discloses a process chamber and semiconductor processing equipment. It includes a chamber body, a bracket, a support, a medium window and at least one seal; the bracket is sandwiched between the chamber body and the medium window, and the support is sandwiched between the medium window and the bracket; wherein, the medium window and the bracket An accommodating structure is provided near the edge area outside the chamber body to accommodate the support; and a seal is provided between the support and the medium window and / or between the support and the bracket. An accommodating structure is provided on the edge area of ​​the medium window and the bracket close to the outer side of the chamber body to accommodate the supporting member. In addition, a seal is provided at the part where the supporting member is in contact with the medium window and the bracket. In this way, during the process, the diffusion path from the plasma to the sealing member can be extended, the particle pollution phenomenon of the plasma etching sealing member can be avoided, the cleanliness of the chamber body can be improved, and the processing yield of the wafer can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a process chamber and semiconductor processing equipment. Background technique [0002] In semiconductor etching equipment, the RF energy provided by the RF power supply is usually transmitted to the process chamber to ionize special gases in a high vacuum state (such as argon Ar, helium He, nitrogen N 2 , hydrogen H 2 etc.), generate a plasma containing a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals, which are complicated with the wafer placed in the process chamber and exposed to the plasma environment Various physical and chemical reactions occur on the surface of the wafer material, thereby changing the surface properties of the material and completing the etching process of the wafer. [0003] However, when the process chamber is in the ignition state, the plasma density between the dielectric wind...

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Problems solved by technology

[0003] However, when the process chamber is in the ignition state, the plasma density between the dielectric window and the support, and between the support and the process chamber is relatively high

Therefore, parts in this surrounding area (area with high plasma concentration) are greatly affected by plasma bombardment etching, so metal contamination and particle contamination will occur, resulting in a decrease in wafer yield

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