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A kind of preparation method of msm photodetector with integrated periodic light trapping structure

A technology of photodetector and light-trapping structure, which is applied in the field of visible light and infrared detection and imaging, can solve the problems of inconvenient large-scale integration and complicated process, and achieve the advantages of easy large-scale integration, simplified preparation process, and improved light detection efficiency Effect

Active Publication Date: 2021-02-19
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method needs to use a wet etching process to separate the device, and then prepare electrodes on the back of the device. The process is relatively complicated and it is not convenient for large-scale integration.

Method used

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  • A kind of preparation method of msm photodetector with integrated periodic light trapping structure
  • A kind of preparation method of msm photodetector with integrated periodic light trapping structure
  • A kind of preparation method of msm photodetector with integrated periodic light trapping structure

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preparation example Construction

[0033] A method for preparing an MSM photodetector integrating a periodic light-trapping structure, comprising the following steps:

[0034] Step 1: On the substrate substrate 10 such as figure 1 -a with figure 2 As shown in -a, the semiconductor thin film 20 is adhered to the surface of the substrate 10 by molecular beam epitaxy or metal organic chemical vapor deposition, as shown in figure 1 -b with figure 2 -b shown;

[0035] Step 2: On the semiconductor film 20, a metal film is prepared by magnetron sputtering and patterned to form several interdigital electrodes 30, such as figure 1 -c with figure 2 -c shown;

[0036] Step 3: Etching several periodic holes along the longitudinal direction of the semiconductor film 20 between each pair of interdigitated electrodes 30 and forming a periodic light trapping structure 40, each periodic hole does not penetrate the semiconductor film 20, as figure 1 -d with figure 2 As shown in -d, the periodic holes are square ho...

Embodiment 1

[0041] Such as figure 1 Shown, a kind of preparation method of the MSM photodetector of integrated periodic light-trapping structure comprises the following steps:

[0042] Step 1: Select a silicon wafer with a silicon dioxide film on the surface as the device substrate. The thickness of the silicon wafer is 500 μm, and the thickness of the silicon dioxide layer is 3 μm. Clean the surface of the substrate to remove contamination, and dry the substrate at 200 ° C Bake for 30 minutes to remove moisture on the surface, such as figure 1 As shown in -a; a layer of silicon thin film is prepared on the substrate substrate by molecular beam epitaxy method, and the silicon thickness is 2.5 μm, such as figure 1 -b shown;

[0043] Step 2: Prepare a metal aluminum film on a silicon film by magnetron sputtering. The thickness of the film is 20nm. The patterned aluminum film forms interdigitated electrodes. The interdigitated electrodes are composed of multiple pairs of electrodes with...

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Abstract

The invention discloses a method for preparing an MSM photodetector with an integrated period-limited light structure, which belongs to the technical field of photodetectors. The method for preparing the MSM photodetector in the invention includes: preparing a semiconductor thin film on a substrate; A number of interdigitated electrodes are formed on the film; several periodic holes are etched between each pair of interdigitated electrodes along the longitudinal direction of the semiconductor film to form a periodic light-limiting structure. Each periodic hole does not penetrate the semiconductor film layer, resulting in high-speed and high-efficiency MSM photodetector. The preparation method integrates a periodic light-trapping structure in the semiconductor thin film between each pair of electrodes, so that the detector has a larger light-trapping structure period and a smaller electrode spacing at the same time, ensuring the response rate of the MSM photodetector. At the same time, the light detection efficiency of the detector is effectively improved, and the invention is used in visible light and infrared detection and imaging technology.

Description

technical field [0001] The invention relates to the technical field of visible light and infrared detection and imaging, in particular to a preparation method of an MSM photodetector with an integrated periodic light trapping structure. Background technique [0002] Photo Detector (PD) is a key device for optical signal conversion in photoelectric detection system and optical fiber communication. At present, the ever-increasing speed of optical fiber communication systems puts forward higher and higher requirements on the response rate of photodetectors, and high-speed photodetectors have become an important research topic. Metal-Semiconductor-Metal Photo Detector (Metal-Semiconductor-Metal Photo Detector) or MSM-PD has gained wide attention and application due to its high responsivity, high sensitivity, simple structure, easy integration and low cost. [0003] MSM photodetector refers to the fabrication of metal electrodes on the surface of semiconductor materials to form ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/108H01L31/18H01L31/0224
CPCH01L31/022408H01L31/1085H01L31/18Y02P70/50
Inventor 苟君谢哲远王军蒋亚东
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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