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Method for preparing metal-semiconductor-metal (MSM) photo detector integrated with periodic light-limiting structure

A photodetector and periodic technology, which is applied in the field of visible light and infrared detection and imaging, can solve the problems of inconvenient large-scale integration and complicated process, and achieve the effects of facilitating large-scale integration, simplifying the preparation process, and improving the efficiency of light detection

Active Publication Date: 2020-02-04
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method needs to use a wet etching process to remove the device, and then prepare a periodic optical trap structure on the back of the device. The process is relatively complicated and not easy for large-scale integration.

Method used

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  • Method for preparing metal-semiconductor-metal (MSM) photo detector integrated with periodic light-limiting structure
  • Method for preparing metal-semiconductor-metal (MSM) photo detector integrated with periodic light-limiting structure
  • Method for preparing metal-semiconductor-metal (MSM) photo detector integrated with periodic light-limiting structure

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preparation example Construction

[0033] A preparation method of an MSM photodetector integrating a period-limited light structure, comprising the following steps:

[0034] Step 1: On the substrate substrate 10 such as figure 1 -a with figure 2 As shown in -a, the semiconductor thin film 20 is adhered to the surface of the substrate 10 by molecular beam epitaxy or metal organic chemical vapor deposition, as shown in figure 1 -b with figure 2 -b shown;

[0035] Step 2: On the semiconductor film 20, a metal film is prepared by magnetron sputtering and patterned to form several interdigital electrodes 30, such as figure 1 -c with figure 2 -c shown;

[0036] Step 3: Etching several periodic holes along the longitudinal direction of the semiconductor thin film 20 between each pair of interdigital electrodes 30 and forming a periodic light-limiting structure 40, each periodic hole does not penetrate the semiconductor thin film layer 20, such as figure 1 -d with figure 2 As shown in -d, the periodic ho...

Embodiment 1

[0041] like figure 1 Shown, a kind of preparation method of the MSM photodetector of integrated period-limited light structure, comprises the following steps:

[0042] Step 1: Select a silicon wafer with a silicon dioxide film on the surface as the device substrate. The thickness of the silicon wafer is 500 μm, and the thickness of the silicon dioxide layer is 3 μm. Clean the surface of the substrate to remove contamination, and dry the substrate at 200 ° C Bake for 30 minutes to remove moisture on the surface, such as figure 1 As shown in -a; a layer of silicon thin film is prepared on the substrate substrate by molecular beam epitaxy method, and the silicon thickness is 2.5 μm, such as figure 1 -b shown;

[0043] Step 2: Prepare a metal aluminum film on a silicon film by magnetron sputtering. The thickness of the film is 20nm. The patterned aluminum film forms interdigitated electrodes. The interdigitated electrodes are composed of multiple pairs of electrodes with a li...

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Abstract

The invention discloses a method for preparing a metal-semiconductor-metal (MSM) photo detector integrated with a periodic light-limiting structure, and belongs to the technical field of photo detectors. The method for preparing a MSM photo detector integrated with the periodic light-limiting structure comprises the steps that semiconductor thin films are prepared on a substrate; a plurality of interdigital electrodes are prepared and formed on the semiconductor thin films; and a plurality of periodic holes are etched in the longitudinal direction of the semiconductor thin films between each pair of interdigital electrodes, the periodic light-limiting structure is formed, and each periodic hole does not penetrate through semiconductor thin film layers to obtain the high-speed and high-efficiency MSM photo detector. According to the method for preparing a MSM photo detector integrated with the periodic light-limiting structure, the periodic light-limiting structure is formed in the semiconductor thin films between each pair of electrodes, so that the detector is provided with the large light-limiting structure period and has a small electrode gap at the same time, the response rateof the MSM photo detector is ensured while the light detection efficiency of the detector is effectively improved, and the method for preparing a MSM photo detector integrated with the periodic light-limiting structure is used for visible light and infrared detection and imaging technology.

Description

technical field [0001] The invention relates to the technical field of visible light and infrared detection and imaging, in particular to a preparation method of an MSM photodetector integrating a period-limited light structure. Background technique [0002] Photo Detector (PD) is a key device for optical signal conversion in photoelectric detection system and optical fiber communication. At present, the ever-increasing speed of optical fiber communication systems puts forward higher and higher requirements on the response rate of photodetectors, and high-speed photodetectors have become an important research topic. Metal-Semiconductor-Metal Photo Detector (Metal-Semiconductor-Metal Photo Detector) or MSM-PD has gained wide attention and application due to its high responsivity, high sensitivity, simple structure, easy integration and low cost. [0003] MSM photodetector refers to the fabrication of metal electrodes on the surface of semiconductor materials to form back-to-...

Claims

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Application Information

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IPC IPC(8): H01L31/108H01L31/18H01L31/0224
CPCH01L31/022408H01L31/1085H01L31/18Y02P70/50
Inventor 苟君谢哲远王军蒋亚东
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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