a kind of ga 2 o 3 Film-based solar-blind ultraviolet detector, preparation method and application

An ultraviolet detector, ga2o3 technology, applied in the direction of semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problem of high cost, achieve the effect of low power consumption, stable structure, and small weight

Active Publication Date: 2021-09-07
金华紫芯科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The existing solar-blind ultraviolet imaging corona detection device uses a high-cut ultraviolet filter, which needs to be equipped with an expensive high-cut ultraviolet filter, and the cost is high

Method used

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  • a kind of ga <sub>2</sub> o <sub>3</sub> Film-based solar-blind ultraviolet detector, preparation method and application
  • a kind of ga <sub>2</sub> o <sub>3</sub> Film-based solar-blind ultraviolet detector, preparation method and application
  • a kind of ga <sub>2</sub> o <sub>3</sub> Film-based solar-blind ultraviolet detector, preparation method and application

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example 1

[0030] a kind of Ga 2 o 3 Preparation method of film-based sun-blind ultraviolet detector:

[0031] First take a piece of (0001) surface α-Al 2 o 3 substrate, the α-Al 2 o 3 Soak the substrate in acetone, ethanol, and deionized water for 10 minutes, then rinse it with deionized water after taking it out, and finally wash it with dry N 2 air-dried and ready for use; put the above-mentioned cleaned and dried substrate in a ceramic boat, such as figure 1 As shown, and put the ceramic boat containing the substrate 2 into the quartz reaction tube 1, and put it into the heating zone of the tube furnace. Vacuumize the chamber and pass in argon gas. The direction of the arrow in the figure is the gas flow direction, adjust the pressure in the vacuum chamber, and then heat the (0001) surface Al 2 o 3 For the substrate, when the temperature rises to the set temperature, open the oxygen and trimethylgallium gas valves successively to adjust the gas flow; turn on the radio frequen...

example 2

[0038] a kind of Ga 2 o 3 Preparation method of film-based sun-blind ultraviolet detector:

[0039] First take a piece of (0001) surface α-Al 2 o 3 substrate, the α-Al 2 o 3 Soak the substrate in acetone, ethanol, and deionized water for 10 minutes, then rinse it with deionized water after taking it out, and finally wash it with dry N 2 Air-dried, ready to use; the above-mentioned cleaned and dried substrates were placed in a ceramic boat and placed in a quartz reaction tube. Vacuumize the cavity, pass in argon gas, adjust the pressure in the vacuum cavity, and then heat the (0001) surface Al 2 o 3 For the substrate, when the temperature rises to the set temperature, open the oxygen and trimethylgallium gas valves successively to adjust the gas flow; turn on the radio frequency power supply and set the radio frequency power; deposit gallium oxide thin film on the substrate. Among them, the cavity pressure is 1Pa after vacuuming; the cavity pressure is 3×10 1 Pa; the r...

example 3

[0043] a kind of Ga 2 o 3 Preparation method of film-based sun-blind ultraviolet detector:

[0044] First take a piece of (0001) surface α-Al 2 o 3 substrate, the α-Al 2 o 3 Soak the substrate in acetone, ethanol, and deionized water for 10 minutes, then rinse it with deionized water after taking it out, and finally wash it with dry N 2 Air-dried, ready to use; the above-mentioned cleaned and dried substrates were placed in a ceramic boat and placed in a quartz reaction tube. Vacuumize the cavity, pass in argon gas, adjust the pressure in the vacuum cavity, and then heat the (0001) surface Al 2 o 3 For the substrate, when the temperature rises to the set temperature, open the oxygen and trimethylgallium gas valves successively to adjust the gas flow; turn on the radio frequency power supply and set the radio frequency power; deposit gallium oxide thin film on the substrate. Among them, the cavity pressure is 1Pa after vacuuming; the cavity pressure is 3×10 1 Pa; the r...

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Abstract

The invention belongs to the field of safety detection of high-voltage power transmission and transformation equipment, and specifically relates to a Ga 2 o 3 Thin-film-based sun-blind ultraviolet detector, preparation method and application, the preparation method comprising (0001) surface Al 2 o 3 As the substrate, using trimethylgallium as the gallium source, the plasma-enhanced chemical vapor deposition method was used on the (0001) plane Al 2 o 3 A layer of β‑Ga is grown on the substrate 2 o 3 film, in β-Ga 2 o 3 Au / Ti interdigitated electrodes are formed by magnetron sputtering above the film layer. Ga of the present invention 2 o 3 The base corona detection device has the advantages of fast response speed, high resolution, long working distance, no interference from sunlight, accurate positioning, etc., and is especially suitable for various harsh environments such as high-voltage substation systems and high-voltage transmission lines. Applications. The detection of corona generated by overhead transmission lines and substation equipment has great commercial value.

Description

technical field [0001] The invention belongs to the field of safety detection of high-voltage power transmission and transformation equipment, and specifically relates to a Ga 2 o 3 Film-based solar-blind ultraviolet detector, preparation method and application. [0002] technical background [0003] Corona discharge refers to the phenomenon of self-sustained discharge that occurs when there are many local ionization and excitation processes on the surface of a charged body in a gas or liquid medium, but there is no breakdown or conduction between electrodes, and it often occurs in an uneven electric field. In very high areas, such as corona discharge in transmission lines, high-voltage electrical appliances, insulators, etc. in the power field. Corona consumes electric energy, and the pulsed electromagnetic waves generated during corona discharge will interfere with radio and high-frequency communications; corona will also cause corrosion on the surface of the wire, thereb...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/101H01L31/0216H01L31/0224H01L31/18
CPCH01L31/02161H01L31/022408H01L31/101H01L31/18Y02P70/50
Inventor 郭道友王顺利
Owner 金华紫芯科技有限公司
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