A kind of sintering device and a kind of preparation method of oxide ceramic target material
A technology of oxide ceramics and sintering devices, which is applied in the field of sintering devices and the preparation of oxide ceramic targets. It can solve the problems of easy deformation, low density, and influence on sintering quality of targets, and achieve continuous and stable industrial production. Simple steps, high density effect
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[0031] The invention provides a method for preparing an oxide ceramic target, comprising the following steps:
[0032] Place the oxide ceramic target body on the splitter spacer of the sintering device described in the above scheme, and perform pre-sintering in the air atmosphere; then pass oxygen through the gas inlet and heat up to the sintering temperature for sintering to obtain oxide Ceramic target.
[0033] In the present invention, the oxide ceramic target body is preferably prepared by the following steps: the nanoscale oxide ceramic powder is subjected to hydroforming, vacuum packaging and cold isostatic pressing in sequence to obtain the oxide ceramic target body . In the present invention, the pressure of the cold isostatic pressing is preferably 285MPa to 300MPa, more preferably 290MPa to 295MPa; the present invention has no special requirements for the specific operation methods of the hydroforming and vacuum packaging. Well-known methods are sufficient.
[003...
Embodiment 1
[0042] use Figure 1~2 The sintering device shown in prepares the ITO target, wherein the number of shunt spacers is 2 pieces, and the steps are as follows:
[0043] (1) Obtain indium tin oxide powder by co-precipitation method according to the ratio of indium tin to 1:8; send the indium tin oxide powder into a ball mill for nano ball milling, and obtain a ball mill with a particle size of 360nm after sieving; the ball mill Sequentially carry out hydroforming, vacuum packaging, and then carry out 285MPa cold isostatic pressing to obtain the target blank;
[0044] (2) Put the target blank into figure 1 On the lower splitter of the sintering device shown, the atmosphere in the sintering furnace is kept as a normal pressure flowing air atmosphere, and the temperature in the sintering furnace is raised to 800°C at a heating rate of 25°C / h. Constant temperature at 800°C for 4h. Then, through the air inlet, the oxygen gas flow with a controllable flow rate is passed into the spli...
Embodiment 2
[0057] use Figure 1~2 The sintering device shown in prepares the ITO target, wherein the number of shunt spacers is 2 pieces, and the steps are as follows:
[0058] (1) Zinc-tin oxide powder is obtained by co-precipitation method according to the ratio of zinc-tin ratio of 1:1; the zinc-tin oxide powder is sent into a ball mill for nano-ball milling, and sieved to obtain a ball mill with a particle size of 360nm; Hydroforming, vacuum packaging, and then 285MPa cold isostatic pressing to obtain the target body;
[0059] (2) Put the target blank into figure 1 On the lower splitter of the sintering device shown, the atmosphere in the sintering furnace is kept as a normal pressure flowing air atmosphere, and the temperature in the sintering furnace is raised to 800°C at a heating rate of 25°C / h. Constant temperature at 800°C for 4h. Then, through the air inlet, the oxygen flow with a controllable flow rate is passed into the split spacer to maintain a fixed oxygen partial pres...
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