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A kind of sintering device and a kind of preparation method of oxide ceramic target material

A technology of oxide ceramics and sintering devices, which is applied in the field of sintering devices and the preparation of oxide ceramic targets. It can solve the problems of easy deformation, low density, and influence on sintering quality of targets, and achieve continuous and stable industrial production. Simple steps, high density effect

Active Publication Date: 2020-11-10
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The current technology is to directly feed oxygen, which cannot accurately adjust the flow of oxygen, so it will have a certain impact on the sintering quality
For example, CN106631049A patent proposes a method for sintering ITO rotating targets at atmospheric pressure, which is sintered in an oxygen atmosphere at atmospheric pressure to obtain ITO rotating targets with a relative density of 98.5-99.4%. The uneven field distribution leads to easy deformation of the target material during sintering, and it is impossible to control the oxygen vacancy density and the precipitation and distribution uniformity of the second phase during the sintering process of the target material, which easily causes defects such as macroscopic and microscopic cracks and pores of the target material, and the density It is less than 99.5%, which leads to the problem of nodules in the later stage of magnetron sputtering, and it is difficult to meet the needs of high-end targets

Method used

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  • A kind of sintering device and a kind of preparation method of oxide ceramic target material
  • A kind of sintering device and a kind of preparation method of oxide ceramic target material
  • A kind of sintering device and a kind of preparation method of oxide ceramic target material

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preparation example Construction

[0031] The invention provides a method for preparing an oxide ceramic target, comprising the following steps:

[0032] Place the oxide ceramic target body on the splitter spacer of the sintering device described in the above scheme, and perform pre-sintering in the air atmosphere; then pass oxygen through the gas inlet and heat up to the sintering temperature for sintering to obtain oxide Ceramic target.

[0033] In the present invention, the oxide ceramic target body is preferably prepared by the following steps: the nanoscale oxide ceramic powder is subjected to hydroforming, vacuum packaging and cold isostatic pressing in sequence to obtain the oxide ceramic target body . In the present invention, the pressure of the cold isostatic pressing is preferably 285MPa to 300MPa, more preferably 290MPa to 295MPa; the present invention has no special requirements for the specific operation methods of the hydroforming and vacuum packaging. Well-known methods are sufficient.

[003...

Embodiment 1

[0042] use Figure 1~2 The sintering device shown in prepares the ITO target, wherein the number of shunt spacers is 2 pieces, and the steps are as follows:

[0043] (1) Obtain indium tin oxide powder by co-precipitation method according to the ratio of indium tin to 1:8; send the indium tin oxide powder into a ball mill for nano ball milling, and obtain a ball mill with a particle size of 360nm after sieving; the ball mill Sequentially carry out hydroforming, vacuum packaging, and then carry out 285MPa cold isostatic pressing to obtain the target blank;

[0044] (2) Put the target blank into figure 1 On the lower splitter of the sintering device shown, the atmosphere in the sintering furnace is kept as a normal pressure flowing air atmosphere, and the temperature in the sintering furnace is raised to 800°C at a heating rate of 25°C / h. Constant temperature at 800°C for 4h. Then, through the air inlet, the oxygen gas flow with a controllable flow rate is passed into the spli...

Embodiment 2

[0057] use Figure 1~2 The sintering device shown in prepares the ITO target, wherein the number of shunt spacers is 2 pieces, and the steps are as follows:

[0058] (1) Zinc-tin oxide powder is obtained by co-precipitation method according to the ratio of zinc-tin ratio of 1:1; the zinc-tin oxide powder is sent into a ball mill for nano-ball milling, and sieved to obtain a ball mill with a particle size of 360nm; Hydroforming, vacuum packaging, and then 285MPa cold isostatic pressing to obtain the target body;

[0059] (2) Put the target blank into figure 1 On the lower splitter of the sintering device shown, the atmosphere in the sintering furnace is kept as a normal pressure flowing air atmosphere, and the temperature in the sintering furnace is raised to 800°C at a heating rate of 25°C / h. Constant temperature at 800°C for 4h. Then, through the air inlet, the oxygen flow with a controllable flow rate is passed into the split spacer to maintain a fixed oxygen partial pres...

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Abstract

The invention belongs to the technical field of target material preparation and provides a sintering device and a preparation method of an oxide ceramic target material. The sintering device providedby the invention comprises a sintering furnace body and a shunting spacer arranged in the furnace chamber of the sintering furnace body. In a sintering process, oxygen is introduced into the furnace chamber through the shunting spacer, so that the temperature difference of the furnace chamber can be reduced; the layered distribution of oxygen flow is controlled, oxygen vacancy density and the precipitation and distribution uniformity of a second phase in a target material sintering process are accurately controlled, and therefore, the quality of a target material can be effectively improved, sintering time is shortened, and the deformation, contractibility and the shape of the second phase of the sintered target material are regulated and controlled. When the sintering device is used for preparing the oxide ceramic target material, the relative density of the obtained target material is larger than 99.9%, and nodulation is not likely to happen in the using process of the sintering device.

Description

technical field [0001] The invention relates to the technical field of target material preparation, in particular to a sintering device and a method for preparing an oxide ceramic target material. Background technique [0002] Oxide ceramic targets are mainly used in the production of transparent conductive oxide (TCO for short). Currently, ITO (indium tin oxide) and ZTO (zinc tin oxide) are widely used. In recent years, with the development of liquid crystal displays, touch panels, organic light-emitting displays, solar cells, etc., transparent conductive films have become one of the key materials. [0003] At present, the oxide ceramic target is mainly prepared by the atmosphere sintering method. The atmosphere sintering is to sinter the target body at a high temperature under a certain atmosphere condition (oxygen). During the sintering process, the oxygen process and the sintering temperature are adjusted. Control the growth of the grain size of the target, and finally ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): F27B17/00C04B35/453C04B35/64B28B3/00
CPCB28B3/003C04B35/453C04B35/64F27B17/0041F27M2003/04
Inventor 李喜峰于正航张建华陈龙龙姜姝
Owner SHANGHAI UNIV