Method for storing and using bad block information of missile-borne FLASH chip

A technology of bad block information and chips, which is applied in the field of storage and use of bad block information of bomb-borne FLASH chips, can solve problems such as poor compatibility, difficulty in changing bad block information, and difficult management, so as to improve operating efficiency, facilitate maintenance and upgrades, and avoid The effect of bad block misoperation

Pending Publication Date: 2020-04-14
CHINA AIR TO AIR MISSILE INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] After the product is delivered, if there is a new FLASH chip output, it is necessary to upgrade the FLASH chip control software of many terrestrial downloading devices that have been finalized or delivered, and add the bad block information of the corresponding new product, and the main control chip program needs to be downloaded from Read the bad block information in the RAM storage unit to operate the FLASH chip, but the bad block information pre-written in the RAM

Method used

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Examples

Experimental program
Comparison scheme
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Example Embodiment

[0019] Example 1

[0020] A method for storing and using the bad block information of the flash chip on board, including the following measures:

[0021] a) Set the first page of the first block of the FLASH chip as the storage location of bad block information;

[0022] b) Add a bad block information write instruction to the FLASH chip control software of the ground download device, and write the bad block information into the first page of the FLASH chip. In the non-working state of the product, the ground download device sends a bad block information write instruction through the FLASH chip control software. After the FLASH chip control program in the main control chip program receives the instruction, it executes the FLASH chip write operation and first writes the data block address Set to 1, set the number of written pages to 1, and then receive the bad block information sent by the FLASH chip control software of the ground download device in turn. When the number of received d...

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PUM

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Abstract

The invention discloses a method for storing and using bad block information of a missile-borne FLASH chip. The method comprises the following steps of a) writing bad block information of each FLASH chip into the same position of each FLASH chip; b) adding an automatic bad block information reading instruction into FLASH chip control software of ground downloading equipment, automatically executing the automatic bad block information reading instruction after the FLASH chip control software is started, automatically reading bad block information and storing the bad block information into the ground downloading equipment; and c) modifying the operation flow of the FLASH chip, preferentially and automatically reading bad block information after resetting, reading the bad block information ofthe FLASH chip, and storing the bad block information into an RAM storage unit of the main control chip. Compared with a traditional scheme, the main control chip program and the FLASH chip controlsoftware can easily obtain the same and latest FLASH chip bad block information, so that the FLASH chip control software and the main control chip program are better in compatibility and easier to maintain.

Description

technical field [0001] The invention belongs to the technical field of missile-borne FLASH chips, and in particular relates to a method for storing and using bad block information of the missile-borne FLASH chip. Background technique [0002] With the development of the missile-borne recording system, the FLASH chip is widely used as the data storage medium of the missile-borne recording system. Often, the FLASH chip control software on the ground download device and the main control chip program of the main control chip operate the FLASH chip. [0003] Due to the production process and other reasons, the FLASH chip will have bad blocks randomly distributed inside when it leaves the factory. The number and location of bad blocks in each FLASH chip are different. When using, if you perform operations such as erasing and programming on bad blocks, it will Cause data storage errors or loss, therefore, operations such as erasing and programming of bad blocks are not allowed. ...

Claims

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Application Information

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IPC IPC(8): G06F3/06
CPCG06F3/0604G06F3/064G06F3/0679
Inventor 王晖牛磊磊戴虹王玉昊董三军姚长虹
Owner CHINA AIR TO AIR MISSILE INST
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