Supercritical processing apparatus

Abstract

A supercritical processing apparatus according to one embodiment in the present invention includes an upper vessel including a first fluid hole formed in a center thereof, and a lower vessel includinga second fluid hole formed in a center thereof. A space is defined between the upper and lower vessels and configured to allow a substrate to be placed therein. The upper vessel further includes a first guide portion provided at a lower portion thereof to be gradually inclined downward toward a periphery thereof from the first fluid hole.

Description

technical field [0001] The invention relates to a supercritical processing device for processing a substrate using a supercritical fluid. Background technique [0002] Generally, semiconductor devices are fabricated from substrates such as silicon wafers. For example, a semiconductor device is manufactured by forming a fine circuit pattern on one side of a substrate by performing an evaporation process, a photolithography process, an etching process, and the like. [0003] While performing the above processes, various foreign matter may adhere to one side of the substrate on which the circuit pattern is formed, and to remove the foreign matter, a supercritical treatment process may be performed. [0004] The supercritical treatment process can be carried out in the following manner: After one side of the substrate is treated with a dry treatment solution such as cleaning solution and isopropyl alcohol (IPA), carbon dioxide (CO 2 ) and other supercritical fluids (Supercriti...

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Problems solved by technology

As a result, sudden pressure and temperature changes may occur in the central portion of the substrate W corresponding to the position of the first fluid hole 11, which may cause problems such as pattern leaning.

At the same time, there may be a difference in the flow velocity of the supercritical fluid between the central part and the peripheral part of the substrate W. Due to the difference in the velocity of the supercritical fluid, temperature deviations may occur in the substrate W by region, and as a result, the process of the substrate W may be caused by region. uneven

[0008] In addition, when the supercritical fluid flows from the second fluid hole 21 of the lower vessel 20, the temperature is concentrated on the center portion of the bottom surface of the substrate W, which may cause a temperature deviation between the center portion and the peripheral portion of the substrate W and the temperature of the substrate W. Inhomogeneous workmanship by region

[0009] In addition, during the process, a vortex may be generated in a predetermined area of ​​the space S, such as the area where the periphery of the substrate W is located, and the eddy may cause particles to be adsorbed on the substrate W again, which may cause process failure.

[0010] In addition, when the supercritical fluid is discharged through the second fluid hole 21 of the lower vessel 20, a vortex may also be generated in the space below the substrate W, so that a smooth fluid flow may not be formed.

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