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Electronic device, memory device and method of precharging column signal lines

A technology of serial signal lines and electronic devices, which is applied in the field of electronic devices and can solve problems such as charge waste

Active Publication Date: 2022-03-25
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Charge used to precharge unselected column signal lines is wasted

Method used

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  • Electronic device, memory device and method of precharging column signal lines
  • Electronic device, memory device and method of precharging column signal lines
  • Electronic device, memory device and method of precharging column signal lines

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Embodiment Construction

[0020] The following disclosure provides many different embodiments or examples for implementing different features of the invention. Specific embodiments or examples of components and arrangements are described below to simplify the present disclosure. Of course these are examples only and are not intended to be limiting. For example, in the following description, forming a first component over or on a second component may include an embodiment in which the first component and the second component are formed in direct contact, and may also include an embodiment in which a first component may be formed between the first component and the second component. Additional components such that the first and second components may not be in direct contact. As used herein, forming a first feature on a second feature means forming the first feature in direct contact with the second feature. Furthermore, the present invention may repeat reference numerals and / or letters in various examp...

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Abstract

The memory device includes memory cells operably connected to column signal lines and word signal lines. Column signal lines associated with one or more memory cells to be accessed (eg, read) are precharged to a first voltage level. Column signal lines not associated with the one or more memory cells to be accessed are precharged to a second voltage level, wherein the second voltage level is less than the first voltage level. Embodiments of the invention also relate to electronic devices and methods of precharging column signal lines.

Description

technical field [0001] Embodiments of the invention relate to electronic devices, memory devices, and methods of precharging column signal lines. Background technique [0002] Different types of memory circuits are used in electronic devices for various purposes. Read Only Memory (ROM) and Random Access Memory (RAM) are two such types of memory circuits. A ROM circuit allows data to be read from, but not written to, a ROM circuit and maintains its stored data when the power is turned off. As such, ROM circuits are often used to store programs that are executed when the electronic device is turned on. [0003] RAM circuits allow data to be written to and read from selected memory cells in the RAM circuit. One type of RAM circuit is a static random access memory (SRAM) circuit. A typical SRAM circuit includes an array of addressable memory cells arranged in columns and rows. When a memory cell is to be read, the memory cell is selected by activating the row word line and ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/413G11C7/12G11C8/08
CPCG11C11/413G11C7/12G11C8/08G11C5/147G11C11/419G11C7/18G11C11/418
Inventor 埃德·麦克库姆
Owner TAIWAN SEMICON MFG CO LTD