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Temperature control self-refreshing method and temperature control self-refreshing circuit of 3D stacked memory

A memory and self-refresh technology, which is applied in the direction of static memory, digital memory information, information storage, etc., can solve the problems of 3D stacked memory adaptive balance refresh, data loss, low data storage security and accuracy, etc.

Active Publication Date: 2020-05-12
SHENZHEN STATE MICROELECTRONICS CO LTD
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Problems solved by technology

[0005] In view of this, the embodiment of the present application provides a temperature-controlled self-refresh method of 3D stacked memory and a temperature-controlled self-refresh circuit of 3D stacked memory, aiming to solve the problem that traditional technical solutions cannot perform adaptive balanced refresh operation on 3D stacked memory , leading to low security and accuracy of data storage, and it is easy to cause data loss for 3D stacked memory

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  • Temperature control self-refreshing method and temperature control self-refreshing circuit of 3D stacked memory
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  • Temperature control self-refreshing method and temperature control self-refreshing circuit of 3D stacked memory

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Embodiment Construction

[0067] In order to make the purpose, technical solution and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present application, and are not intended to limit the present application.

[0068] Today, many applications require large bandwidth, such as high-performance computing (High Performance Computing, HPC), Ethernet, graphics memory (Graphics Processing Unit, GPU), etc.; moreover, due to the accumulation of big data, the innovation of theoretical algorithms, The improvement of computing power and the evolution of network facilities have made the artificial intelligence industry, which has been accumulated for more than half a century, usher in revolutionary progress again, and the research and application of artificial intelligence have entered a new s...

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Abstract

The invention discloses a temperature control self-refreshing method of a 3D stacked memory and a temperature control self-refreshing circuit of the 3D stacked memory. The temperature control self-refreshing method comprises the following steps: measuring the temperature of a memory to be refreshed, and generating an internal refreshing rate; receiving an external refresh rate; obtaining a targetrefresh rate of the to-be-refreshed memory according to the internal refresh rate and the external refresh rate; controlling the to-be-refreshed memory to be refreshed at the target refreshing rate; therefore, according to the method, the corresponding internal refresh rate is set for each memory; in combination with the internal refresh rate and the external refresh rate, balanced adaptive refresh control can be performed on the to-be-refreshed memory, so that the data storage security of the 3D stacked memory is ensured, and the reliability and stability of the 3D stacked memory are improved.

Description

technical field [0001] The present application belongs to the technical field of memory control, and in particular relates to a temperature-controlled self-refresh method of a 3D stacked memory and a temperature-controlled self-refresh circuit of a 3D stacked memory. Background technique [0002] With the continuous development of electronic technology, related electronic equipment will generate a large amount of data during operation, so technicians must use storage electronic equipment to completely retain the data output by electronic equipment, thereby ensuring the operation safety of electronic equipment; and electronic equipment The output data is gradually developing in the direction of large capacity, real-time, parallel input and output, then the electronic equipment will generate a large amount of parameters in the working process, correspondingly, the storage device also needs to have large storage capacity, high bandwidth, Low-latency memory access performance; o...

Claims

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Application Information

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IPC IPC(8): G11C11/406
CPCG11C11/40626G11C11/40611G11C11/40615
Inventor 邓玉良朱晓锐殷中云方晓伟杨彬唐越陈佩纯郑伟坤
Owner SHENZHEN STATE MICROELECTRONICS CO LTD
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