PERC battery with novel front structure

A positive structure and battery technology, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problems of shading effect on photoelectric conversion efficiency, etc., to improve battery photoelectric conversion efficiency, good current collection effect, and enhanced anti-reflective passivation effect Effect

Inactive Publication Date: 2020-06-02
ZHEJIANG AIKO SOLAR ENERGY TECH CO LTD
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  • Abstract
  • Description
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AI Technical Summary

Problems solved by technology

[0005] The present invention provides a PERC battery with a novel front structure; it solves the problem in the prior art that the shading effect of the metal fine grid on the surface of the battery will directly affect the photoelectric conversion efficiency

Method used

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  • PERC battery with novel front structure
  • PERC battery with novel front structure

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Embodiment 1

[0018] Example 1: see figure 1 and figure 2 , a PERC cell with a new front structure, comprising a P-type silicon substrate 1 and an N+ diffusion layer 2 formed by diffusion on its upper surface, the upper surface of the N+ diffusion layer 2 is provided with a SiNx passivation layer 3, and on the SiNx passivation layer 3 There are several slots 6 that run through the SiNx passivation layer 3 and are distributed in a grid line pattern. The SiNx passivation layer 3 and the slots 6 are covered with a transparent and conductive TCO film 4, and the surface of the TCO film 4 corresponds to A metal busbar 5 is printed above the slot 6 of the busbar.

[0019] Before depositing the TCO film, it is necessary to perform laser grooving on the SiNx passivation layer to break through the SiNx passivation film at the position of the main gate and the fine gate, so that the TCO film can contact the P-type silicon substrate to achieve the function of collecting electrons.

[0020] The inven...

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Abstract

The invention relates to a PERC battery with a novel front structure, which comprises a P-type silicon substrate and an N+ diffusion layer formed by diffusion on the upper surface of the P-type silicon substrate, and is characterized in that a SiNx passivation layer is arranged on the upper surface of the N+ diffusion layer, the SiNx passivation layer is provided with a plurality of open slots which penetrate through the SiNx passivation layer and are distributed in a grid line pattern, the SiNx passivation layer and the open slots are covered with a transparent conductive TCO film, and metalmain grids are printed on the surface of the TCO film and above the open slots corresponding to the main grids. According to the invention, a metal fine grid on the battery is cancelled; photogenerated current generated by a transmission silicon substrate is collected by utilizing the characteristics of optical transparency and conductivity of the TCO film; and compared with a traditional metal fine grid, the current collection effect is better, the transmission loss is less, and the composite loss can be reduced. In addition, the TCO film is transparent, so that the shielding of the metal fine grid on the light receiving surface of the battery is avoided, and the purpose of improving the photoelectric conversion efficiency of the battery is achieved.

Description

technical field [0001] The invention relates to a PERC battery, in particular to a PERC battery with a novel front structure. Background technique [0002] With the progress of the society and the further adjustment of the energy structure, the photovoltaic industry, which uses solar energy to generate electricity, is attracting more and more attention. Crystalline silicon solar cells in solar cells use the photovoltaic effect of semiconductor PN junctions to directly convert solar energy into electrical energy, which is cleaner and more efficient than traditional coal and oil power generation. The crystalline silicon solar cells on the market can be divided into N-type and P-type cells. In the existing manufacturing system, P-type cells are mainly passivated emitter and rear cells (PERC). [0003] For PERC cells, the high contact resistance between the metal grid lines on the cell surface and semiconductor silicon and the shading effect of the metal fine grid on the cell s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/0216H01L31/068
CPCH01L31/02168H01L31/022433H01L31/022466H01L31/022475H01L31/068Y02E10/547
Inventor 唐超宛张小明林纲正陈刚
Owner ZHEJIANG AIKO SOLAR ENERGY TECH CO LTD
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