Silicon wafer texturing method

A silicon wafer and silicon wafer surface technology, applied in the field of battery preparation technology, can solve the problems of the influence of amorphous silicon deposition, the ability to peel off particles is not fully reflected, and the organic residues, etc. The effect of reflectivity

Inactive Publication Date: 2020-07-10
ZHONGWEI NEW ENERGY CHENGDU CO LTD
View PDF6 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, before going to the HF tank, the surface of the silicon wafer is not completely oxidized, and the ability of the HF tank to remove ions and particles is not fully reflected.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon wafer texturing method
  • Silicon wafer texturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] A kind of texturing method of silicon chip, comprises the following steps:

[0034] S1. Carry out pre-oxidation treatment to the silicon wafer to be treated to remove the surface pollutants of the silicon wafer. The used cleaning solution SC1 solution, wherein the volume fraction of the KOH solution with a concentration of 45wt% is 1.6%, and the concentration is 30wt% of H 2 o 2 The volume fraction of the aqueous solution is 10%, the balance is water, the temperature is 60°C, and the time is 5 minutes;

[0035] S2. Put the silicon wafer obtained in S1 into pure water for cleaning, and wash off the cleaning solution in S1 remaining on the surface of the silicon wafer;

[0036] S3. Put the silicon wafer obtained in S2 into the SDE tank for damage removal treatment. The solution in the SDE tank has a concentration of 20 wt% KOH solution, the balance is water, the temperature is 70°C, and the treatment time is 30s;

[0037] S4, putting the silicon wafer obtained in S3 int...

Embodiment 2

[0047] A kind of texturing method of silicon chip, comprises the following steps:

[0048] S1, carrying out pre-oxidation treatment to the silicon wafer to be treated to remove the surface pollutants of the silicon wafer, the cleaning solution SC1 solution used, wherein the volume fraction of the NaOH solution with a concentration of 45wt% is 1.6%, and the concentration is 30wt% of H 2 o 2 The volume fraction of the aqueous solution is 10%, the balance is water, the temperature is 60°C, and the time is 5 minutes;

[0049] S2. Put the silicon wafer obtained in S1 into pure water for cleaning, and wash off the cleaning solution in S1 remaining on the surface of the silicon wafer;

[0050] S3. Put the silicon wafer obtained in S2 into the SDE tank for damage removal treatment. The solution in the SDE tank has a concentration of 10 wt% KOH solution, the balance is water, the temperature is 42°C, and the treatment time is 100s;

[0051] S4, putting the silicon wafer obtained in S...

Embodiment 3

[0061] A kind of texturing method of silicon chip, comprises the following steps:

[0062] S1, pre-oxidize the silicon wafer to be treated to remove the surface pollutants of the silicon wafer, the cleaning solution SC1 solution used, wherein the concentration is 45wt% NH 4 The OH solution has a volume fraction of 1.6% and a concentration of 30 wt% H 2 o 2 The volume fraction of the aqueous solution is 10%, the balance is water, the temperature is 60°C, and the time is 5 minutes;

[0063] S2. Put the silicon wafer obtained in S1 into pure water for cleaning, and wash off the cleaning solution in S1 remaining on the surface of the silicon wafer;

[0064] S3. Put the silicon wafer obtained in S2 into the SDE tank for damage removal treatment. The solution in the SDE tank is a KOH solution with a concentration of 2wt%, the balance is water, the temperature is 85°C, and the treatment time is 240s;

[0065] S4, putting the silicon wafer obtained in S3 into O 3 Washed in solutio...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a silicon wafer texturing method which comprises the following steps: S1, carrying out pre-oxidation treatment on a silicon wafer to be treated to remove pollutants on the surface of the silicon wafer; S2, putting the silicon wafer obtained in the step S1 into pure water for cleaning; S3, putting the silicon wafer obtained in the S2 into an SDE groove for SDE treatment; S4,performing surface oxidation treatment on the silicon wafer obtained in S3; S5, putting the silicon wafer obtained in the step S4 into pure water for cleaning; S6, putting the silicon wafer obtainedin S5 into a TEX groove for texturing treatment; S7, putting the silicon wafer obtained in S6 into pure water for cleaning; S8, performing post-cleaning 1 on the silicon wafer obtained in the S7; S9,putting the silicon wafer obtained in the step S8 into pure water for cleaning, and then performing CP; S10, cleaning the silicon wafer obtained in the step S9 with purified water, and then carrying out post-cleaning 2; S11, cleaning the silicon wafer obtained in the step S10 with purified water, and then cleaning the silicon wafer with hydrofluoric acid; and S12, cleaning the silicon wafer obtained in the step S11 with purified water, and then drying the silicon wafer. The method is suitable for cleaning and texturing the surface of a heterojunction battery.

Description

technical field [0001] The battery preparation process of the present invention specifically relates to a silicon wafer texturing method. Background technique [0002] SHJ (Silicon Herterojunction) silicon heterojunction battery, also known as HIT (Heterojunctionwith intrinsic thin layer) battery, this battery has the characteristics of high efficiency, high Voc, etc., the battery is generally based on N-type silicon wafers, and the silicon substrate interface The requirements are particularly strict (sensitive to surface cleanliness after texturing), and the general process steps are: texturing, amorphous silicon, TCO, screen & testing. [0003] At present, in the large-scale production of SHJ, the texturing process of silicon substrates generally adopts the process of pre-cleaning → damage removal → texturing → post-cleaning → CP (chemical polishing) → HF cleaning → drying, and in the texturing process Among them, the added texturing additives are usually divided into hyd...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L31/18H01L31/0236
CPCH01L31/02363H01L31/1804Y02P70/50
Inventor 孙林杜俊霖孟凡英刘正新陈功兵何堂贵
Owner ZHONGWEI NEW ENERGY CHENGDU CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap