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Silicon wafer texturing post-processing method

A silicon wafer and post-cleaning technology, applied in the directions of post-processing details, post-processing, chemical instruments and methods, etc., can solve the problems of the influence of amorphous silicon deposition, organic residues, and inability to hydrophobicize the surface of silicon wafers, and achieve Isc improvement, The effect of high battery efficiency

Inactive Publication Date: 2020-08-18
ZHONGWEI NEW ENERGY CHENGDU CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the prior art, cleaning silicon wafers directly with HF acid cannot completely hydrophobize the surface of silicon wafers. On the other hand, in the mass production process, there may still be organic residues on the surface of silicon wafers after CP. Sedimentation brings impact

Method used

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Experimental program
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Effect test

Embodiment 1

[0018] Post-processing the textured silicon wafer:

[0019] S1. Clean the silicon wafers after texturing with SC1 cleaning solution. After the final cleaning, wash off the SC1 cleaning solution on the surface of the silicon wafer with pure water. The SC1 cleaning solution is KOH and H 2 o 2 A mixed solution in which the volume fraction of 45wt% KOH is 1.6%, and the concentration is 30wt% H 2 o 2 The volume fraction is 10%, the rest is water, the temperature is 60°C, and the time is 5min;

[0020] S2, putting the silicon chip obtained in S1 into the ozone solution, at room temperature for 180s, O 3 Concentration 10ppm;

[0021] S3. Put the silicon chip obtained in S2 into the hydrofluoric acid solution for 120 seconds, and the volume fraction of HF (concentration: 49 wt%) is 10%. After the HF acid cleaning is completed, wash off the residual HF acid on the surface of the silicon chip with pure water.

Embodiment 2

[0029] Post-processing the textured silicon wafer:

[0030] S1. Clean the silicon wafers after texturing with SC1 cleaning solution. After the final cleaning, wash off the SC1 cleaning solution on the surface of the silicon wafer with pure water. The SC1 cleaning solution is KOH and H 2 o 2 A mixed solution in which the volume fraction of 45wt% KOH is 1.6%, and the concentration is 30wt% H 2 o 2 The volume fraction is 10%, the rest is water, the temperature is 60°C, and the time is 5min;

[0031] S2. Perform chemical polishing on the silicon wafer obtained in S1. The chemical polishing liquid is a mixture of hydrofluoric acid and nitric acid, wherein the volume fraction of hydrofluoric acid with a concentration of 49 wt% is 0.5%, and the volume fraction of nitric acid with a concentration of 69 wt% is 99.5%. , the temperature is room temperature, and the time is 5min; the obtained silicon wafer is washed with pure water for 120s;

[0032] S3, putting the silicon chip obtai...

Embodiment 3

[0045] Post-processing the textured silicon wafer:

[0046] S1. Clean the silicon wafers after texturing with SC1 cleaning solution. After the final cleaning, wash off the SC1 cleaning solution on the surface of the silicon wafer with pure water. The SC1 cleaning solution is KOH and H 2 o 2 A mixed solution in which the volume fraction of 45wt% KOH is 1.6%, and the concentration is 30wt% H 2 o 2 The volume fraction is 10%, the rest is water, the temperature is 60°C, and the time is 5min;

[0047] S2. Perform chemical polishing on the silicon wafer obtained in S1. The chemical polishing liquid is a mixture of hydrofluoric acid and nitric acid, wherein the volume fraction of hydrofluoric acid with a concentration of 49 wt% is 0.5%, and the volume fraction of nitric acid with a concentration of 69 wt% is 99.5%. , the temperature is room temperature, and the time is 5min; the obtained silicon wafer is washed with pure water for 120s;

[0048] S3, putting the silicon wafer obtain...

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Abstract

The invention discloses a silicon wafer texturing post-processing method, which comprises the step of carrying out surface oxidation on a textured silicon wafer by using ozone and before HF cleaning.According to the method, before the hydrofluoric acid cleaning, a layer of SiO2 is formed on the surface of the silicon wafer by utilizing the oxidability of ozone, and then HF cleaning and strippingare carried out, so that the effects of removing surface particles, organic matters, ions and the like are achieved. Meanwhile, part of organic matters can be directly oxidized by the oxidability of ozone, so that the effect of direct removal is achieved.

Description

technical field [0001] The battery preparation process of the invention specifically relates to a method for post-processing silicon wafer texturing. Background technique [0002] SHJ (Silicon Herterojunction) silicon heterojunction battery, also known as HIT (Heterojunctionwith intrinsic thin layer) battery, this battery has the characteristics of high efficiency, high Voc, etc., the battery is generally based on N-type silicon wafers, and the silicon substrate interface The requirements are particularly strict (sensitive to surface cleanliness after texturing), and the general process steps are: texturing, amorphous silicon, TCO, screen & testing. [0003] At present, in the large-scale production of SHJ, the texturing process of silicon substrates generally adopts the process of pre-cleaning → damage removal → texturing → post-cleaning → chemical polishing (CP) → HF cleaning → drying, and the silicon substrate after texturing The cleanliness of the chip surface will grea...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0236H01L21/02C30B33/10
CPCC30B33/10H01L21/0201H01L31/02366H01L31/18Y02P70/50
Inventor 孙林杜俊霖孟凡英刘正新陈功兵何堂贵
Owner ZHONGWEI NEW ENERGY CHENGDU CO LTD
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