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Erasing method and device of nonvolatile memory

A non-volatile memory, erasing module technology, applied in instruments, data processing input/output process, electrical digital data processing and other directions, can solve problems such as sector over-erasing

Inactive Publication Date: 2020-06-05
XTX TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For those sectors that are easy to erase, multiple erasing may cause the sector to be in an over-erased state

Method used

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  • Erasing method and device of nonvolatile memory
  • Erasing method and device of nonvolatile memory
  • Erasing method and device of nonvolatile memory

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Experimental program
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Embodiment Construction

[0028] refer to figure 1 , figure 1 It is a schematic flowchart of an erasing method in the prior art.

[0029] Such as figure 1 As shown, in the prior art, after the block is erased, the erase verification is performed, that is, whether each sector in the check block is successfully erased, and if each sector is successfully erased, the soft programming step is performed; if If it is detected that there is a sector that has failed to be erased in the block, the block is erased again, that is, it enters a loop, and the soft programming step is not performed until it is detected that all sectors are successfully erased.

[0030] In common cases, a block (block) contains 16 sectors (sectors), if one of the sectors (sector A) has been erased 10K times, and the other sectors have not been erased, then sector A The required erasing time may be 300ms (it needs to be erased 100 times to be successful), and the erasing time of the remaining 15 sectors is 30ms. If block erase is per...

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Abstract

The invention discloses an erasing method and an erasing device of a nonvolatile memory. The erasing method comprises the steps of: erasing a to-be-erased region, and detecting whether regions failingto be erased exist in the to-be-erased region or not after the execution of an erasing operation is completed; when the regions failing to be erased exist in the to-be-erased region, detecting whether a number of the regions failing to be erased is smaller than or equal to a preset threshold value and larger than zero; and if the number of the regions failing to be erased is smaller than or equalto the preset threshold value and larger than zero, erasing the regions failing to be erased until the number of the regions failing to be erased is zero, and entering a soft programming step. By means of the erasing method and the erasing device of the nonvolatile memory, the soft programming time is shortened, unnecessary erasure is reduced, and the service life of the nonvolatile memory is indirectly prolonged.

Description

technical field [0001] The invention relates to the technical field of semiconductor storage, in particular to a method and device for erasing a nonvolatile memory. Background technique [0002] At present, the minimum erasing unit of common non-volatile memory is sector erasing, followed by block erasing, and the largest is chip erasing. In the user's use, multiple read-write and erase operations are often performed on a certain sector or block, and the characteristics of these sectors or blocks will become worse, that is, under the same erasing conditions, it will be more difficult to erase. longer. When these hard-to-erase sectors / blocks are erased together with normal sectors / blocks, it will cause the normal sectors / blocks to be in an over-erased state. [0003] The main reason for the formation of over-erasing: Assuming that -8v is applied to the gate, 10v is applied to the source, and the drain is suspended, a single erase pulse lasts for several us to tens of us. D...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F3/06
CPCG06F3/0617G06F3/0652G06F3/0679
Inventor 刘梦
Owner XTX TECH INC
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