Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Film forming apparatus, film forming method and manufacturing method of electronic device

A film-forming device and film-forming object technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as uneven film quality, no record of film-forming control, and film-forming quality reduction

Pending Publication Date: 2020-07-07
CANON TOKKI CORP
View PDF12 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, the quality of the film formation may decrease, such as unevenness in film thickness and film quality, etc.
However, Patent

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Film forming apparatus, film forming method and manufacturing method of electronic device
  • Film forming apparatus, film forming method and manufacturing method of electronic device
  • Film forming apparatus, film forming method and manufacturing method of electronic device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0036] The basic configuration of the film forming apparatus 1 according to Embodiment 1 will be described with reference to the drawings. The film forming apparatus 1 is used to deposit and form a thin film on a substrate (including a laminated body formed on the substrate) in the manufacture of various electronic devices such as semiconductor devices, magnetic devices, and electronic components, and optical components. More specifically, the film forming apparatus 1 is preferably used in the manufacture of electronic devices such as light emitting elements, photoelectric conversion elements, and touch panels. Among them, the film-forming apparatus 1 of the present embodiment is particularly preferably used in the production of organic light-emitting elements such as organic EL (Electro Luminescence: electroluminescence) elements, and organic photoelectric conversion elements such as organic thin-film solar cells. The electronic device in the present invention also includes a...

Embodiment approach 2

[0070] Next, Embodiment 2 of the present invention will be described. Hereinafter, differences from Embodiment 1 will be mainly described, and the same components will be given the same reference numerals to simplify the description.

[0071] Figure 4 (a) shows the film formation apparatus 1 of this embodiment. In the film forming apparatus 1 , instead of using a rotary cathode unit using a cylindrical target, a planar cathode unit 308 using a flat plate-shaped target 302 is used. The planar cathode unit 308 has a target 302 arranged parallel to the object 6 to be film-formed, and the magnet unit 3 as a magnetic field generating means is arranged on the opposite side of the target 302 to the object 6 to be film-formed. In addition, a backing plate 302 a to which electric power is applied from the power source 13 is provided on the surface of the target 302 opposite to the object 6 to be film-formed. Sputtered particles are emitted from the sputtering region A1 by applying ...

Embodiment approach 3

[0076] Next, Embodiment 3 of the present invention will be described. Hereinafter, differences from the above-described embodiments will be mainly described, and the same components will be given the same reference numerals to simplify the description.

[0077] Figure 5 The film formation apparatus 1 of this embodiment is shown. in the above Figure 4 (b)~ Figure 4 In (d), the magnet unit 3 in the planar cathode unit can move relative to the target 302 . In the present embodiment, the flat plate-shaped target 402 is larger than the film formation target object 6 in both the X-axis direction and the Y-axis direction, and is fixedly installed with respect to the chamber 10 . In addition, the magnet unit 3 as a magnetic field generating mechanism moves relative to the target 402 fixed to the chamber 10 (ie, relative to the chamber 10 ). Accompanied by this, the sputtering region A1 of the target 402 from which the target particles are emitted also moves relative to the fil...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to a film forming apparatus, a film forming method, and a manufacturing method of an electronic device. Even in the case where sputtering is performed while moving a sputtering area in a chamber having uneven pressure distribution, it is possible to suppress deterioration in sputtering quality. The film forming apparatus (1) has a chamber (10) in which a film-formingobject (6) and a target (2) are arranged, and a moving mechanism (moving table driving device (12)) allowing a sputtering area (A) generating sputtered particles from the target (2) in the chamber (10). The film forming apparatus (1) uses the moving mechanism to move the sputtering area (A1) and deposit the sputtered particles on the film-forming target (6) to form a film. The film forming apparatus (1) has a pressure adjustment mechanism (exhaust mechanism (15), gas introduction mechanism (16)) that adjusts the pressure in the chamber (10). The pressure adjustment mechanism adjusts the pressure in the chamber based on the position of sputtering area (A1) in the chamber (10).

Description

technical field [0001] The present invention relates to a film forming device, a film forming method and a method for manufacturing electronic devices. Background technique [0002] A sputtering method is widely known as a method for forming a thin film made of a material such as a metal or a metal oxide on a film formation object such as a substrate or a laminate formed on the substrate. A film-forming apparatus that forms a film by a sputtering method has a structure in which a target made of a film-forming material and a film-forming object are arranged to face each other in a vacuum chamber. When a voltage is applied to the target, plasma is generated near the target, ionized inert gas elements collide with the target surface, and sputter particles are emitted from the target surface, and the emitted sputter particles are deposited on the film-forming object to form a film. In addition, a magnetron sputtering method is also known. In this magnetron sputtering method, a ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C14/35C23C14/50C23C14/56H01L21/67
CPCC23C14/35C23C14/50C23C14/56H01L21/67011C23C14/34C23C14/54H01J37/3455H01J37/3473
Inventor 菅原洋纪松本行生
Owner CANON TOKKI CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com