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Memory and operation method thereof

An operation method and memory technology, applied in the field of memory, can solve problems such as difficult and impossible to manufacture memory, and achieve the effect of easy access

Pending Publication Date: 2020-08-28
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as the capacity of memories has gradually increased, it has become difficult to manufacture memories free of faulty memory cells
Currently, it seems impossible to manufacture such memory

Method used

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  • Memory and operation method thereof
  • Memory and operation method thereof
  • Memory and operation method thereof

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Embodiment Construction

[0015] Various embodiments will be described in more detail below with reference to the accompanying drawings. However, this invention may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Throughout this disclosure, like reference numerals refer to like parts in the various figures and embodiments of the invention.

[0016] Note that references to "an embodiment," "another embodiment," etc. do not necessarily mean only one embodiment, and that different references to any such phrase are not necessarily to the same embodiment.

[0017] It will be understood that although the terms "first", "second", "third", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used to distinguish o...

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Abstract

The invention provides a memory and an operation method thereof. The operation method of the memory including normal word lines and redundancy word lines may include receiving a row redundancy information and a flag signal along with an active command and a row address; and activating one of the redundancy word lines by decoding the row redundancy information according to a logic level of the flagsignal.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2019-0019769 filed on February 20, 2019, the entire contents of which are hereby incorporated by reference. technical field [0003] Various embodiments relate to memory, and more particularly, to repair of memory. Background technique [0004] In the early days of the semiconductor memory industry, multiple pristine, high-quality dies with no faulty memory cells were distributed on a wafer in a memory chip that had undergone a semiconductor manufacturing process. However, as the capacity of memories has gradually increased, it has become difficult to manufacture memories free of faulty memory cells. Currently, it does not appear to be possible to manufacture such a memory. As a way of solving such a problem, a repair method is used to provide redundant memory cells within a memory and to replace failed cells with redundant memory cells. [0005]...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C8/10
CPCG11C8/10G11C29/883G11C29/76G11C29/808G11C2029/4402G11C8/08
Inventor 白宇铉
Owner SK HYNIX INC