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A plastic-encapsulated high-pressure silicon stack

A technology of high-voltage silicon stacks and silicon stacks, which is applied in semiconductor/solid-state device components, semiconductor devices, electrical components, etc., and can solve problems such as limited forward power, small forward current, and cracking of epoxy plastic packages , to achieve the effect of improving the energizing power capability, reducing the conduction voltage drop, and ensuring the energizing power

Active Publication Date: 2022-06-07
西安卫光科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The heat dissipation area is limited, and the hot spots are relatively concentrated, and epoxy resin is a material with high insulation performance, but its heat dissipation performance is poor. Due to the influence of heat dissipation factors of the package, the forward power of the overall product is limited. When the product is I F = 2A positive current aging, there will be cracks in the epoxy plastic package, which will directly lead to the failure of the silicon stack device
Therefore, the forward working current of the traditional silicon stack is less than 1A, and the forward current is small.

Method used

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  • A plastic-encapsulated high-pressure silicon stack
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  • A plastic-encapsulated high-pressure silicon stack

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Embodiment Construction

[0034] In the description of the present invention, it should be understood that the terms "center", "portrait", "horizontal", "top", "bottom", "front", "rear", "left", "right", " The orientation or positional relationship indicated by "vertical", "horizontal", "top", "bottom", "inside", "outside", "one side", "one end", "one side", etc. The orientation or positional relationship is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the indicated device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention. In addition, the terms "first" and "second" are only used for descriptive purposes, and should not be construed as indicating or implying relative importance or implying the number of indicated technical features. Thus, a feature defined as "first" or "second" may expre...

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Abstract

The invention discloses a plastic-encapsulated high-voltage silicon stack, which includes a plurality of ceramic copper clads arranged at intervals in sequence. The plurality of ceramic copper clads are connected in series according to the polarity direction through inner leads to form a serpentine silicon stack assembly. The two ends of the silicon stack assembly The ceramic copper clads are respectively connected to the corresponding threaded electrodes, and each ceramic copper clad is provided with a diode die in a vacuum sintering manner, and the diode dies are connected to the inner lead through an aluminum wire. The present invention adopts a new technology structure silicon stack, and the newly developed product can increase the overall working current to 2-2.5A on the basis of the same packaging outline size, thereby improving the power of the product.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, in particular to a plastic-sealed high-voltage silicon stack. Background technique [0002] Silicon high-voltage rectifier silicon stack products are widely used in various fields of national defense construction such as aerospace, aviation, ships, weapons, electronics, etc. Due to the high reverse withstand voltage of the products, in order to ensure electrical insulation performance, silicon stack devices are currently mainly encapsulated with epoxy resin main. [0003] The traditional silicon stacking process is to stack multiple glass passivated encapsulated diodes in series, and then place the spot-welded silicon stack components into a casting mold for epoxy potting molding. The product structure is to connect multiple glass-encapsulated diodes in series to form a silicon stack by spot welding, and then use epoxy casting to form. The internal structure is as follows: figure ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L25/07H01L23/498H01L23/31H01L23/492H01L21/60
CPCH01L25/072H01L23/49866H01L23/3121H01L24/84H01L24/37H01L2224/37116H01L2924/01047H01L2924/0105
Inventor 伍志雄刘文辉许允亮白朝辉王维乐智晶李斐行晓曦
Owner 西安卫光科技有限公司