Plastic package high-voltage silicon stack

Abstract

The invention discloses a plastic package high-voltage silicon stack. The plastic package high-voltage silicon stack comprises a plurality of ceramic copper-clad plates which are sequentially arrangedat intervals, the plurality of ceramic copper-clad plates are connected in series through an inner lead in the polarity direction to form a silicon stack assembly of a snake-shaped structure, the ceramic copper-clad plates at the two ends of the silicon stack assembly are connected with corresponding threaded electrodes respectively, each ceramic copper-clad plate is provided with a diode die ina vacuum sintering mode, and the diode die is connected with the inner lead through an aluminum wire. By adopting the silicon stack with a novel process structure, the overall working current of a newly developed product can be increased to 2-2.5 A on the basis that the packaging boundary dimension is not changed, and the electrifying power of the product is increased.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, in particular to a plastic-encapsulated high-voltage silicon stack. Background technique [0002] Silicon high-voltage rectifier silicon stack products are widely used in various fields of national defense construction such as aerospace, aviation, ships, weapons, and electronics; due to the high reverse withstand voltage of the product, in order to ensure electrical insulation performance, silicon stack devices are currently mainly packaged with epoxy resin Mainly. [0003] The traditional silicon stack process is to stack multiple glass-passivated encapsulated diodes in series, and then put the spot-welded silicon stack components into the casting mold for epoxy potting and molding. The product structure is that multiple glass-sealed diodes are connected in series by spot welding to form a silicon stack, and then molded by epoxy casting. The internal structure is as follows: figu...

AI Technical Summary

Problems solved by technology

[0007] The heat dissipation area is limited, and the hot spots are relatively concentrated, and epoxy resin is a material with high insulation performance, but its heat dissipation performance is poor. Due to the influence of heat dissipation factors of the package, the forward power of the overall product is limited. When the product is I F = 2A positive current aging, there will be cracks in the epoxy plastic package, which will directly lead to the failure of the silicon stack device

Therefore, the forward working current of the traditional silicon stack is less than 1A, and the forward current is small.

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